A Review of Atomic Layer Deposition for Nanoscale Devices

Edy Riyanto (State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Material Science and Engineering, Donghua University, Shanghai 201620)
Estiko Rijanto (Research Centre for Electrical Power & Mechatronics, Indonesian Institute of Sciences, Komp LIPI Jl Cisitu 21/54D, Gd 20, Bandung 40135)
Budi Prawara (Research Centre for Electrical Power & Mechatronics, Indonesian Institute of Sciences, Komp LIPI Jl Cisitu 21/54D, Gd 20, Bandung 40135)

Mechatronics, Electrical Power, and Vehicular Technology
Vol 3, No 2 (2012)

Atomic layer deposition (ALD) is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM), and microelectromechanic system (MEMS). By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.