Analisis Sifat-sifat Optoelektronik Lapisan Tipis Silikon Amorf terhidrogenasi yang ditumbuhkan dengan Teknik VHF-PECVD pada Variasi Daya RF

Ida Usman ( Jurusan Fisika FMIPA, Universitas Haluoleo)
Amiruddin Supu ( Jurusan Fisika FMIPA, Universitas Nusa Cendana)
Mursal Mursal ( Jurusan Fisika, FPMIPA, Universitas Syiah Kuala, Aceh)
Sukirno Sukirno ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB)
Toto Winata ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB)
Mohamad Barmawi ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB)

Jurnal Matematika & Sains
Vol 10, No 2 (2005)

The hydrogenated amorphous silicon (a-Si:H) thin films have been deposited using VHF-PECVD technique. The deposition process was done by varied the rf power from 6 to 12.5 watts with 300 mTorr of chamber pressure and from 20 to 70 watts with 100 mTorr of chamber pressure. The highest deposition rate of 2.99 Å/sec and the highest photoconductivity of 1.13 x 10-4 S/cm were obtained from 8 watts of rf power when the rf power was varied from 6 to 12.5 watts. Then, the highest deposition rate of 9.57 Å/sec was obtained from 40 watts of rf power and the highest photoconductivity of 1.54 x 10-2 S/cm was obtained from 20 watts of rf power when the rf power was varied from 20 to 70 watts. Based on the analysis of characterization results, the degradation of a-Si:H film conductivity was caused by the formation of defect states such as band-tail defect and bandgap defect.