Article Per Year (5 Year)
p-Index From 2020 - 2025
0.408
P-Index
This Author published in this journals
All Journal Jurnal Matematika & Sains Jurnal Aplikasi Fisika JOURNAL ONLINE OF PHYSICS Jurnal Pengabdian Masyarakat Ilmu Terapan (JPMIT)
Ida Usman
Department of Physics, Faculty of Mathematics and Natural Sciences, Haluoleo University, Kendari, Sulawesi Tenggara
Agriculture, Biological Sciences & Forestry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Electrical & Electronics Engineering Mathematics Physics

Published : 9 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 9 Documents
Search

 1 
Optimasi Parameter Tekanan Deposisi pada Penumbuhan Lapisan Tipis Polykristal Silikon dengan Metode Hot Wire Cell PECVD Amiruddin Supu; Ida Usman; Mursal Mursal; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The Hot wire Cell PECVD method has been developed to grow the poly-Si thin films. The poly-Si thin films were grown on the 7059 corning glass at a filament temperature of 1800 oC. Silane (SiH4) gas 10% diluted in hydrogen (H2) gas was used as gas source. In the hot wire cell PECVD method, reactant gases were decomposed as a result of reaction with a heated filament placed above the substrate and paralel to the gas inlet. The characterization results exhibited that the poly-Si thin films could be grown at the pressure of 200 to 500 mTorr with a substrate temperature of 275 oC. The analysis of XRD result showed that preferential intensity was obtained at the crystal orientation of . The highest values of peak intensity (111 cps), grains size (minor axis 0.5 µm) and dark conductivity (0.60x10-5 Scm-1) were obtained at the deposition pressure of 300 mTorr with deposition rate of 2.2 nm/s.
Analisis Sifat-sifat Optoelektronik Lapisan Tipis Silikon Amorf terhidrogenasi yang ditumbuhkan dengan Teknik VHF-PECVD pada Variasi Daya RF Ida Usman; Amiruddin Supu; Mursal Mursal; Sukirno Sukirno; Toto Winata; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The hydrogenated amorphous silicon (a-Si:H) thin films have been deposited using VHF-PECVD technique. The deposition process was done by varied the rf power from 6 to 12.5 watts with 300 mTorr of chamber pressure and from 20 to 70 watts with 100 mTorr of chamber pressure. The highest deposition rate of 2.99 Å/sec and the highest photoconductivity of 1.13 x 10-4 S/cm were obtained from 8 watts of rf power when the rf power was varied from 6 to 12.5 watts. Then, the highest deposition rate of 9.57 Å/sec was obtained from 40 watts of rf power and the highest photoconductivity of 1.54 x 10-2 S/cm was obtained from 20 watts of rf power when the rf power was varied from 20 to 70 watts. Based on the analysis of characterization results, the degradation of a-Si:H film conductivity was caused by the formation of defect states such as band-tail defect and bandgap defect.
Pengaruh Daya RF terhadap Kandungan Ge dan Sifat Opto-Elektronik Lapisan Tipis a-SiGe:H Mursal Mursal; Amiruddin Supu; Ida Usman; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 10, No 4 (2005)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The effect of rf power on Ge content (CGe) and opto-electronic properties of a-SiGe:H thin films deposited by PECVD method had been investigated. a-SiGe:H thin films were grown on corning glass 7059 substrate from a gas mixture of SiH4 and GeH4 10% diluted in H2, respectively. The substrate temperature was kept at 275oC and the rf power was varied from 50 - 120 Watt. The results showed that the CGe of a-SiGe:H thin films decreases with increasing in rf power, and therefore the optical bandgap (Eopt) increases. We found that the optimum rf power was 90 Watt, which corresponds to the highest photo-sensitivity of 1.43 x 104.
Optimization of Deposition Parameters for high Quality a-SiGe:H Thin Films Mursal Mursal; Ida Usman; Toto Winata; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The effect of substrate temperature and rf power on the characteristics of a-SiGe:H alloys thin films has been investigated. The a-SiGe:H films made from a mixture of 10% silane (SiH4) and 10% germane (GeH4) gas diluted in hydrogen (H2) were grown on corning glass 7059 by using Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The results showed that the deposition rate of a-SiGe:H films increased with the increasing of substrate temperature and rf power. The optical band gap (Eopt) of the films was improved by increasing of the rf power. The dependency of Eopt on the rf power is attributed to the change in Ge content in the films. The photosensitivity (σph/σd) of the films deposited at 200 °C and 175 °C slightly increased with increasing of rf power from 30-50 Watt. For the films deposited at 225 °C, the photosensitivity increased with increasing of rf power from 30-40 Watt, and relatively constant at rf power of 40-60 Watt.
Pengaruh Ketebalan Lapisan Aktif terhadap Karakteristik Sel Surya Berbasis a-Si:H yang Ditumbuhkan dengan Teknik HWC-VHF-PECVD Ida Usman; Toto Winata
Jurnal Matematika & Sains Vol 13, No 4 (2008)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The HWC-VHF-PECVD (Hot Wire Cell Very High Frequency Plasma Enhanced Chemical Vapor Deposition) technique has been developed for silicon thin film deposition. The developed technique was also used to fabricate the hydrogenated amorphous silicon (a-Si:H) based p-i-n solar cells with varied active layer (i-layer) thickness. Based on the measurement result of current-voltage (I-V) characteristic of resulted solar cells, it is known that the conversion efficiencies are influenced by the i-layer thickness of each solar cell. In this research, the highest conversion efficiency of 9,39 % was achieved from solar cell with i-layer of 5500 Å thickness. All of solar cell parameters decrease as the ilayer thickness increases to 6000 Å, which were probably affected by the serial resistance increases that marked by the degradation of fill factor value.
Investigation of Ground State Properties of Neutron-Rich Titanium Isotopes by the Use of SHF+BCS Method Muhammad Zamrun; Ida Usman; La Aba
Jurnal Matematika & Sains Vol 16, No 2 (2011)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

The ground state properties of Ti-isotopes (44,46,48,50,52,56,58Ti) such as binding energy, density distribution, kinetic energy density distribution and local potential for proton and neutron are investigated using the Skyrme-Hartree-Fock (SHF)+Bardeen-Cooper-Schrieffer (BCS) method. In performing the SHF+BCS calculations, we use three most successfully Skyrme force parameters that are SIII, SkM*, and Sly4. It is found that the binding energy obtained with these three parameters is in well agreement with the experimental data. The calculated density distributions, kinetic energy densities and local potentials for proton and neutron using the three parameters for each titanium isotope are similar to each other, especially the slope and in the surface region. Our study indicates that SHF method is adequate to describe the ground state properties of the nucleus. Keywords: Skyrme-Hartree-Fock, Binding energy, Density distribution, Local potential. Investigasi Sifat-sifat Keadaan Dasar dari Isotop Titanium yang Berlebih Neutron dengan Metode SHF+BCS Abstrak Sifat-sifat keadaan dasar dari isotop-isotop Titanium (44,46,48,50,52,54,56,58Ti) berupa energi ikat, distribusi densitas, distribusi densitas energi kinetik serta potensial lokal untuk proton dan netron ditelaah dengan menggunakan metode Skyrme-Hartree-Fock (SHF)+Bardeen-Cooper-Schrieffer (BCS). Dalam melakukan perhitungan dengan metode SHF+BCS ini digunakan tiga set paramater untuk gaya-gaya Skyrme yaitu parameter SIII, SkM* dan Sly4. Energi ikat yang diperoleh dengan tiga set parameter ini sesuai dengan hasil eksperimen untuk semua isotop Titanium. Distribusi densitas, densitas energi kinetik dan potensial lokal yang diperoleh dengan tiga parameter tersebut untuk setiap isotop titanium  mirip satu sama lain terutama untuk kemiringan dan daerah permukaan. Telaah ini menunjukkan bahwa metode SHF dapat digunakan untuk menentukan sifat-sifat keadaan dasar inti atom. Kata kunci: Skyrme-Hartree-Fock, Energi ikat, Distribusi densitas, Potensial lokal.
Aplikasi Problem Based Learning Terhadap Keterampilan Berpikir Kritis Siswa SMA Made Kusumayasa; Muhammad Anas; Ida Usman
Jurnal Aplikasi Fisika Vol 11, No 1 (2015): JURNAL APLIKASI FISIKA
Publisher : Universitas Halu Oleo

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

An experimental study to analyze descriptively and inferentially the differences in students’ critical thinking ability to learn physics between problem-based learning and conventional model at class XI of SMA Negeri 2 Konawe was performed. Tests and questionnaires were applied. Students of XI IPA classes were served as samples. The samples were determined through a simple random sampling technique, resulting in class XI IPA3 with 31 students as an experimental group, and class XI IPA1 with 31 students as a control group, thereby 62 out of 119 students were selected as the samples. Data were collected by administering a pre- and post-test instrument to measure students’ critical thinking ability to learn Physics. The data were analyzed by using descriptive and inferential statistics. The hypotheses were tested by using the U Mann-Whitney test and Manova analysis, in which a significance level 0.05 was used, thereby if the significance value was lower than 0.05 (sig. < α = 0.05), then H0 was rejected and H1 accepted. The results of data analysis showed that (1) there was a difference in terms of critical thinking ability between the class XI IPA students of SMA Negeri 2 Konawe which learned through a problem-based learning and those who learned in a conventional model and (2) there was a difference in terms of critical thinking ability to learn Physics between the class XI IPA students of SMA Negeri 2 Konawe which learned through a problem-based learning and those who learned in a conventional model.
PELATIHAN SISTEM BALANCING VOTE DATA UNTUK MENGATASI KONFLIK HORIZONTAL AKIBAT SURVEY PILKADA Ruslan Ruslan; Gusti Arvyana Rahman; Izal Izal; Ida Usman; Lilis Laome; Irma Yahya; Agusrawati Agusrawati
Jurnal Pengabdian Masyarakat Ilmu Terapan Vol 5, No 1 (2023)
Publisher : Vokasi Universitas Halu Oleo

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.33772/jpmit.v5i1.40169

Abstract

Pemilihan Kepala Daerah (Pilkada) merupakan kegiatan yang melibatkan aspirasi masyarakat secara umum yang dihelat secara periodik setiap lima tahun sekali. Pilkada kerap kali memicu timbulnya konflik horizontal di masyarakat karena dalam pelaksanaannya dilakukan secara langsung. Perbedaan mencolok hasil hitungan cepat (quick count) antar lembaga survey pada proses pilkada dapat membuat masyarakat menjadi bingung. Peran akademisi dan tokoh masyarakat dalam menangani masalah yang kerap tejadi selama proses pilkada berlangsung sangat dibutuhkan untuk mengurangi ketegangan di masyarakat yang terjadi selama proses pilkada berlangsung sangat dibutuhkan untuk mengurangi ketegangan di masyarakat yang terjadi akibat perbedaan hasil perhitungan cepat dari berbagai lembaga survey adalah melakukan kegiatan pelatihan yaitu pelatihan sistem balancing vote data untuk mengatasi konflik horizontal akibat survey pilkada. Hasil pelatihan menunjukan adanya peningkatan pemahaman materi pelatihan yang signifikan dari para peserta tentang konsep quick count pilkada dan konsep sampling.   
PENGARUH TEMPERATUR AKTIVASI TERHADAP KUALITAS BRIKET ARANG AKTIF SEKAM PADI La Ode Rusman; Lina Lestari; Sapto Raharjo; Ida Usman; Desi Chrismiwahdani
JOURNAL ONLINE OF PHYSICS Vol. 8 No. 3 (2023): JOP (Journal Online of Physics) Vol 8 No 3
Publisher : Prodi Fisika FST UNJA

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.22437/jop.v8i3.23846

Abstract

Kajian tentang analisis kualitas briket arang sekam padi yang diaktivasi dengan tanur telah berhasil dilakukan. Penelitian ini merupakan penelitian eksperimen yang bertujuan untuk menentukan pengaruh variasi suhu aktivasi terhadap kualitas briket arang aktif sekam padi. Kualitas briket arang dapat ditentukan dari kerapatan, kadar air, kadar abu, volatile matter, fixed carbon, nilai kalor dan uji pembakaran untuk mengamati waktu sulut dan laju nyala. Penelitian ini dilakukan melalui beberapa tahap yaitu penyiapan bahan baku, karbonisasi, penggerusan dan pengayakan, pencampuran bahan perekat, pencetakan, pengeringan dan penentuan mutu briket. Briket arang aktif sekam padi dibuat dengan menggunakan sagu sebagai perekat dangan perbandingan massa 9:1. Serbuk arang sekam padi diayak dengan ayakan berukuran 70 - 80 mesh. Sampel dicetak menggunakantekanan 9,5x106 N/m2 dan diaktivasi dengan tanur pada suhu 450°C, 475°C, dan 500°C selama 4 menit. Hasil penelitian menunjukkan bahwa kerapatan yang diperoleh berkisar 0,606 - 0,640 g/cm3, kadar air berkisar 4,57-5,29%, kadar abu berkisar antara 4,89 - 6,57%, volatile matter berkisar antara 70,15 - 75,35%, nilai kalor berkisar 4923,58 - 5131,84 kal/g. Arang yang diaktivasi pada suhu 500°C menunjukkan kualitas baik dengan waktu sulut 5,5 menit, laju pembakaran 0,08 g/menit, temperatur maksimum 482,5°C dan lama pembakaran selama 35 menit.
Co-Authors Agusrawati Agusrawati Amiruddin Supu Desi Chrismiwahdani Gusti Arvyana Rahman Irma Yahya Izal Izal La Aba La Ode Rusman Lilis Laome Lina Lestari Made Kusumayasa Mohamad Barmawi Muhammad Anas Muhammad Zamrun Mursal Mursal Ruslan Ruslan Sapto Raharjo Sukirno Sukirno Toto Winata