Sifat Listrik Film Tipis SrTiO3 untuk Kapasitor MOS

Darsikin Darsikin ( Program Studi Fisika, Universitas Tadulako, Palu)
Khairurrijal Khairurrijal ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA ITB)
Sukirno Sukirno ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA ITB)
Mohamad Barmawi ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA ITB)

Jurnal Matematika & Sains
Vol 10, No 3 (2005)

Strontium titanate (SrTiO3) film was successfully deposited on a silicon substrate by using a pulsed-laser ablation deposition (PLAD) technique. The optimum temperature is 600o C. The electrical properties measurement was metal-oxide-semiconductor capacitor. The film exhibits good insulating property at room temperature. The fixed charge density and leakage current density were also calculated. The results show that the films have promising applications as alternative gate dielectrics.