Karakteristik Struktur dan Listrik Film Tipis GaN yang Ditumbuhkan di atas Substrat Si(111) dengan Metode Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD)

Heri Sutanto ( Jurusan Fisika, Universitas Diponegoro, Semarang)
Agus Subagio ( Jurusan Fisika, Universitas Diponegoro, Semarang)
Edi Supriyanto ( Jurusan Fisika, Universitas Negeri Jember, Jember)
Pepen Arifin ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA ITB)
Sukirno Sukirno ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB)
Maman Budiman ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB)
Mohamad Barmawi ( Lab. Fisika Material Elektronik, Jurusan Fisika FMIPA - ITB)

Jurnal Matematika & Sains
Vol 11, No 1 (2006)

Gallium nitride (GaN) thin films have been grown on Si(111) substrate by PA-MOCVD method, with trimethylgallium (TMGa) and radical nitrogen resulted by plasma of nitrogen gas as a source of Ga and N respectively. The growth was performed at 675 °C; 0.4 torr; 90 sccm and 0.08-0.12 sccm of substrate temperature, reactor pressure, gas flow of nitrogen and TMGa, respectively. The grown polycrystalline GaN thin films have hexagonal structure and n-type semiconductor. The growth rate of the grown thin films increased with increasing gas flow of TMGa. The Hall mobility value of films is still low due to the presence of O and C impurities. The highest value of mobility was found to be 64.88 cm2/V.s with 5.47 x 1018 cm-3 of carrier concentration.