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All Journal JOURNAL OF COASTAL DEVELOPMENT ILMU KELAUTAN: Indonesian Journal of Marine Sciences Reaktor BERKALA FISIKA SAINS DAN MATEMATIKA JURNAL SISTEM INFORMASI BISNIS Jurnal Materi dan Pembelajaran Fisika Jurnal Kedokteran Brawijaya Ganendra: Majalah IPTEK Nuklir Jurnal Sains Materi Indonesia Chem Info YOUNGSTER PHYSICS JOURNAL Manajemen Sumber Daya Manusia Prosiding Seminar Nasional Sains Dan Teknologi Fakultas Teknik JURNAL FISIKA Jurnal Matematika & Sains Jurnal Promkes: The Indonesian Journal of Health Promotion and Health Education Journal of Natural Sciences and Mathematics Research ELKOMIKA: Jurnal Teknik Energi Elektrik, Teknik Telekomunikasi, & Teknik Elektronika The Indonesian Journal of Occupational Safety and Health Edumatsains Proceeding of the Electrical Engineering Computer Science and Informatics JITEK (Jurnal Ilmiah Teknosains) Majalah Kesehatan FKUB Syntax Literate: Jurnal Ilmiah Indonesia Communications in Science and Technology Journal of Physics and Its Applications DE'RECHTSSTAAT Jurnal Fisika Indonesia CRJIM (Clinical and Research Journal in Internal Medicine) Bulletin of Community Engagement Jurnal Patria Bahari Progressive Physics Journal Teknologi Sipil : Jurnal Ilmu Pengetahuan dan Teknologi Gunung Djati Conference Series LOGIC : Jurnal Ilmu Komputer dan Pendidikan Journal of Agrosociology and Sustainability Indonesian Journal of Biomedicine and Clinical Sciences Deka in Medicine
Heri Sutanto
Departemen Fisika, Fakultas Sains Dan Matematika, Universitas Diponegoro, Semarang
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Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic) Andi Suhandi; Heri Sutanto; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

Gallium Arsenide (GaAs) film have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) method on Semi Insulating-Gallium Arsenide (SI-GaAs) substrates using of Trisdimethylaminoarsenic (TDMAAs) and Trimethylgallium (TMGa) precursors. The characteristic of GaAs film strongly depends on growth temperature. The best crystallinity quality of film was obtained at growth temperature, V/III ratio, reactor pressure, N2 and H2 dilute are 580 oC, 4.8, 50 torr, 300 sccm, respectively. X-ray diffraction data indicate that the GaAs films grown at 580 oC show epitaxial layer with FWHM on (200) peak of about 0,477o. Hall effect measurement data indicate that the grown layer were p-type semiconductor, with Hall mobility and carrier concentration in the range of 346 cm2/V.s and 3.17 x 1017 cm-3, respectively. The band gap of GaAs films determined by photoluminiscense (PL) measurement was 1,42 eV. This value is same as the band gap of bulk GaAs.
GaN-based Double-hetero Film Grown and Fabricated on (0001) Sapphire Substrates by Plasma-assisted MOCVD Heri Sutanto; Edi Supriyanto; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

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GaN-based double-hetero film has been grown on (0001) sapphire substrate by plasma-assisted MOCVD method. The structure of film was n-GaN/Al0.25Ga0.75N/In0.3Ga0.7N/Al0.25Ga0.75N/p-GaN. A photoluminescence (PL) peak originating from InGaN active layer has been observed at room temperature, which produced emission wavelength of 453 nm corresponded to energy of 2.74 eV. However, broadening of the peak caused by the crystalline quality of the InGaN epilayer is still poor, which is related with fluctuation of In rich regions.
Karakteristik Struktur dan Listrik Film Tipis GaN yang Ditumbuhkan di atas Substrat Si(111) dengan Metode Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD) Heri Sutanto; Agus Subagio; Edi Supriyanto; Pepen Arifin; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 1 (2006)
Publisher : Institut Teknologi Bandung

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Gallium nitride (GaN) thin films have been grown on Si(111) substrate by PA-MOCVD method, with trimethylgallium (TMGa) and radical nitrogen resulted by plasma of nitrogen gas as a source of Ga and N respectively. The growth was performed at 675 °C; 0.4 torr; 90 sccm and 0.08-0.12 sccm of substrate temperature, reactor pressure, gas flow of nitrogen and TMGa, respectively. The grown polycrystalline GaN thin films have hexagonal structure and n-type semiconductor. The growth rate of the grown thin films increased with increasing gas flow of TMGa. The Hall mobility value of films is still low due to the presence of O and C impurities. The highest value of mobility was found to be 64.88 cm2/V.s with 5.47 x 1018 cm-3 of carrier concentration.
N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD Budi Mulyanti; Agus Subagio; Edi Supriyanto; Heri Sutanto; Fitri Suryani Arsyad; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Ferromagnetic semiconductor GaN:Mn thin films were successfully grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) method on c-plane sapphire substrate. The films were grown at various Mn source flux in the range of 5 - 40 sccm and growth temperature which was lower than that of MOCVD themal, i.e. in the range of 625-700 °C. Cyclopentadienyl manganese tricarbonyl (CpMnT) was used as a source of Mn. X-ray diffraction patterns confirmed that GaN:Mn films are wurtzite and do not show second phase for film with Mn concentration up to 6.4% at 650 °C of growth temperature. Hall effect measurements show n-type characteristics. The carrier (electron) density tends to decreases and Hall mobility tends to with the increase of Mn concentration is increased. Hysteresis curves observed from VSM measurements indicated that all of the samples are ferromagnetic at room temperature.
PREDIKSI PERHITUNGAN DOSIS RADIASI PADA PEMERIKSAAN MAMMOGRAFI MENGGUNAKAN ALGORITMA JARINGAN SYARAF TIRUAN PROPAGASI BALIK Arifin, Zaenal; Sutanto, Heri; Pamungkas, Adi; Setiawan, Rudi
BERKALA FISIKA 2015: Berkala Fisika Vol. 18 No. 4 Tahun 2015
Publisher : BERKALA FISIKA

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Abstract

Dose radiation calculation systems in mammography examination can be approximated by models of Artificial Neural Network (ANN) back propagation algorithm. In this study we performed with data from the measurement of air dose mammography and data measurement dose of radiation detectors. ANN architecture by using two inputs and one output. From the simulation results of training resulted in a correlation coefficient of 0.9994 and the MSE of 5.2907e-05. From the test results obtained by the correlation coefficient of 0.9370 dan MSE value generated is equal to 2.2026. this suggests that the neural network algorithm can be implemented to calculate the amount of radiation dose in mammography examination. Keywords: Radiation Dose, Mammography, Artificial Neural Network, Accuracy. 
SINTESIS MATERIAL NANO Fe3O4 DARI KARAT BESI YANG BERPOTENSI DIAPLIKASIKAN SEBAGAI SOLAR ABSORBER PADA QUANTUM DOT SENSITIZED SOLAR CELL (QDSSC) Ma’rufah, Hani; Rohmaniah, Siti; Aripin, Muhamat; Sutanto, Heri
BERKALA FISIKA Vol 22, No 3 (2019): Berkala Fisika Vol. 22 No. 3 Tahun 2019
Publisher : BERKALA FISIKA

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Abstract

Iron (Fe) corrosion that occurs in nature produces iron oxide (Fe3O4). The Fe3O4 has the strongest magnetic properties than in other phases such as Fe2O3. So far, Fe3O4 material from iron rust has not been widely used and further processed. If the material is made in the size of nano-meter, Fe3O4 will have ferromagnetic properties and have broad application opportunities. One of advantages is its ferromagnetic properties can absorb electromagnetic waves. High energy milling (HEM) is a physical method for making nano Fe3O4. One application of nano Fe3O4 material is as a solar absorber on quantum dot sensitized solar cell (QDSSC). In this research, the synthesis of Fe3O4 nano material from iron rust as solar absorber on QDSSC has been studied. One of the criteria of a solar absorber can be seen from the optical properties. From the scanning electron microscopy (SEM) test, it can be observed that the behavior of milling can reduce the size of the material. From the energy dispersive X-ray spectroscopy (EDS) test results, it was proven that pure synthesized material only contained Fe and O. From the X-ray diffractometer (XRD) test showed specific peaks formed were: 29.5, 350.0, 43.0, 54.0, 57.0, and 63.0. The UV-Vis test showed the band gap energy obtained was 3.3 eV.Keywords: Corrosion iron, solar absorber, QDSSC
PENGARUH VARIASI KOMPOSISI BRIKET ORGANIK TERHADAP TEMPERATUR DAN WAKTU PEMBAKARAN Tarsito, Teguh; Sutanto, Heri; Marhaendrajaya, Indras
BERKALA FISIKA Vol 16, No 1 (2013): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

It has been carried out to study of influence of variation composition in organic briquetteabout temperature and duration time combustion briquette that was optimum. Briquette had made that was  briquette with composition rice hull, briquette with composition rice hull and sawdust wood rubber that mixed with glue from amylum gel. Experimental method was used in this research. Briquette sample  was burned and measured the temperature of combustion so we gained the values between temperature with combustion briquette duration time of sample briquette,briquette mass before combustion and mass residue of combustion. From the result of this researchthe conclusions can be made were the sample briquette   have  highest temperature of combustionand longest  duration time of  combustion was sample briquette with composition rice hull andwood rubber sawdust = 4 grams : 6 grams with oven  temperatur  100oC because have longestduration time combustion  over temperature  100oC with fluctuation 100°C-150°C was 12 minutes.Keywords :  briquette,  combustion calor, rice hull
PENENTUAN DOSIS RADIASI EKSTERNAL PADA PEKERJA RADIASI DI RUANG PENYINARAN UNIT RADIOTERAPI RUMAH SAKIT DR.KARIADI SEMARANG Widyaningsih, Dewi; Sutanto, Heri
BERKALA FISIKA Vol 16, No 2 (2013): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

Application of nuclear technology is very usefull but it is very risk for human health andsafety, therefore necessary to control of radiation for humans and the environment. For it hasbeen done on the monitoring of external radiation dose to radiations workers in the examinationroom of radiotherapy unit Dr.Kariadi Semarang hospital. The study was conducted by measuringradiation dose rate of examianation room and operator’s room using Surveymeter and monitoringexternal radiation dose of radiation workers using alarm personal dosimeter Rados. The resultsshowed that the highest radiation dose rate is below the head source is equal to 20 μSv / h.External radiation dose in radiation workers every month on average 33.84 μSv, then for one yearis estimated to be 0.406 mSv. This value is within the allowable limit according to the dose limitvalue set by ICRP and BAPETEN which should not exceed 20 mSv a year.Keywords: external radiation dose, dose limit value, radiation protection.
DEPOSISI LAPISAN TIPIS ZnO:Ag DAN APLIKASINYA UNTUK DEGRADASI POLUTAN ORGANIK Anngita, Sheilla Rully; Sutanto, Heri
BERKALA FISIKA 2014: Berkala Fisika Vol. 17 No. 3 Tahun 2014
Publisher : BERKALA FISIKA

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Abstract

Zinc Oxide (ZnO) is a semiconductor material that is used for photo-catalyst to degrade organic pollutants. The addition of doping silver (Ag) in ZnO can increase the photo-catalytic activity in the degradation process. In this study, the addition of doping Ag in ZnO thin film on a glass substrate deposition using thermal spray coating method has influence on the micro-structure and photo-degradation in presence of bacteria Escherichia coli (E. coli) as an organic pollutants has been investigated. Micro-structure of ZnO : Ag layer were characterized by Scanning Electron Microscopy (SEM) and photo-degradation activities of bacteria were tested with Total Plate Counter (TPC). The results show that doping Ag in ZnO give affect the topography of the surface that can increase in amount of grains and grain size in order to increase the photo-catalytic activity. It indicated by decrease in amount of E. coli bacteria from the initial sample with percentage of degradation is 99,99951% Keyword: Semiconductor, photo-catalyst, ZnO, doping Ag, micro-structure, photo-degradation
SINTESIS LAPISAN TIPIS SENG OKSIDA DIDOPING PERAK (ZnO:Ag) DAN APLIKASINYA UNTUK PENDEGRADASI POLUTAN ORGANIK AIR Sutanto, Heri; Nurhasanah, Iis; Hidayanto, Eko
BERKALA FISIKA 2015: Berkala Fisika Vol. 18 No. 4 Tahun 2015
Publisher : BERKALA FISIKA

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Abstract

Zinc Oxide (ZnO) is a semiconductor material that is used for photo-catalyst to degrade organic pollutants. The addition of doping silver (Ag) in ZnO can increase the photo-catalytic activity in the degradation process. In this study, the addition of doping Ag in ZnO thin film on a glass substrate deposition using thermal spray coating method has influence on the micro-structure and photo-degradation in presence of bacteria Escherichia coli (E. coli) as an organic pollutants has been investigated. Micro-structure of ZnO : Ag layer were characterized by Scanning Electron Microscopy (SEM) and photo-degradation activities of bacteria were tested with Total Plate Counter (TPC). The results show that doping Ag in ZnO give affect the topography of the surface that can increase in amount of grains and grain size in order to increase the photo-catalytic activity. It indicated by decrease in amount of E. coli bacteria from the initial sample with percentage of degradation is 99,99951% Keywords: Semiconductor, photo-catalyst, ZnO, doping Ag, micro-structure, photo-degradation
Co-Authors . Istadi A Asriyanto A. Suhandi Abellia, Gaby Adi Pamungkas Agus Romadhon Agus Subagio Agus Subagio Agus Subagiyo Agustya Tri Surono Ahmad Pradana Ali Roo'in Mas'uul Alkian, Ilham Amalia, Dinda Andri Yanyah Anggraeni Dwi Haryowati Annisa Vidia Fajarini Ansory Khaerul Apriliyanda Nur Adha Ari Wibawa Budi Santosa Aries Subiantoro Aripin, Muhamat Aris Puji Widodo Arisa Dwi Sakti Aristi Dian Purnama Fitri Aristi Dian Purnama Putri Asriyanto Asriyanto Astri Suppa Supratman Aulia Narindra Mukhtar Ayu Adriyuni Lestari Babay Suhaemi, Babay Banto, Paulus Basuki Budi Raharjo Bayu Persawan Benyamin Kusumoputro Budi Mulyanti Budiman, Rizki C. I. Sutrisno Carles Yerid Absalom Nalle Catur Rakhmad , Handoko Choirul Anam Choirul Anam AM Diponegoro Dadang Suprijatna Darwin Ismail Dewi Indiastari Dewi Widyaningsih Didi Candradikusuma Dilla Sistesya Dita Kesumayadi Donni Damara Dwi Adhianto Dwi Antoro, Dwi Dwitarahma, Marshandyar Edi Supriyanto Edwin Zusagka Edy Supriyanto Eko Hidayanto Eko Hidayanto Eko Hidayanto Eko Hidayanto Ery Budiman Fachriza Noor Abdi Fandi Fandi Fatma, Endah Fitri Suryani Arsyad Frederica Thalita Riqti Fredrikus Martono Abing Galih Puspa Saraswati Galih Puspa Saraswati Gede Wiratma Jaya Gede Wiratma Jaya Geoff Dougherty Gultom, Tiopan H. M H Hadiyanto Habik Setiawan Hadiyanto Hadiyanto Hamdy, Muhammad Hamzah Fuadi Hanum Yuda Aditya HAQQI, MUHAMMAD SABILA Hary Kusuma Hendri Widiyandari hermanto, djoko heri Hermawan, Hermawan I Gusti Bagus Wiksuana I Ketut Suada I. Istadi Ida Usman Iis Nurhasanah Iis Nurhasanah Iis Nurhasanah Indiastari, Dewi Indras Marhaendrajaya Indro Adi Nugroho Inur Tivani Isrina Nur Laili Iwan Setiyawan Japeri Japeri Jefri Pratama Susanto, Jefri Pratama Jhonwesly Manik K Sofjan Firdausi K Sofjan Firdausi Kadar Nurjaman Kartini Sinaga Kurniawan, Kukuh Dian Lilis Sulastri Luthfi Nurrahma Shofiana Ma’rufah, Hani Maman Budiman Maman Budiman Mardewi Jamal Marediyanti Pusvitasari Maryanto - Masayu Widiastuti Milanitalia Gadys Rosandy Moehamad Barmawi Mohamad Barmawi Mohammad Arief Rahman Muckharom, Ahmad Ali MUH. SYAFRIL SUNUSI Muhammad Arif Ikrimah Muhammad Irwanto Muhammad Jazir Alkas Muhammad Yusuf Mukaromah, Uli Aprilia Nastiti, Davina Maritza Ndaru Adyono Niniek Budiarti Niniek Budiarti B Nofi Marlini Nuha Nazilah Sahabudin Nur Hasim Efendi Nur Samsu NURJAMAN TINO ENDASAH Nursidi Yunanto Nurwati Nurwati Obet Lumalan Bijang Pandji Triadyaksa Pepen Arifin Pepen Arifin Prameswari Widya Ningtyas Pratama, Satya Priyono Priyono Qudsiyah, Risma Aimatul Rahmawati Rasito Tursinah, Rasito Ravael Eldad Pongtuluran Reyhana Almira Rahma Riky Ardiyanto Rin Hafsatul Asiah Riski Nihayati Rizky Asdi Kesuma Rizky Bimanda Sakti Rob Danang Priatmaja Rohmaniah, Siti Rosandi, Millanitalia Rosandy, Milanitalia Rosandy, Milanitalia Gadys Rosyad, Muhammad Sabilul Rudi Setiawan Rudi Sohidi Tohir S. Suryono Sa'adah, Fatkhiyatus Sahabudin, Nuha Nazilah Sanggam Ramantisan Santi Yuli Astuti Sembiring, Rinawati Setyowati, Lita Sheilla Rully Anggita Sheilla Rully Anngita, Sheilla Rully Simbolon, Ruminsar Simbolon, Ruminsar ok Singgih Wibowo Sinta Silvia Sri Soenarti Sriwidodo, Untung Suddin, Alwi Sufwan Durri Sukirno Sukirno Sukirno Sukirno Sulistia Nurdianik Supriyati Supriyati Sutikman, Sutikman Syamsul Arifin Syamsul Hidayah Tamrin Rahman Tato Bangun, Roy Teguh Tarsito Toto Winata Tri Windarti Triana Sharly P. Arifin Uli Aprilia Mukaromah veronica, Vera W Widiatini Wahyu Ambikawati Wahyu Setia Budi Wilda Amananti Wilda Amananti Winarsih Winarsih Wiwien Andriyanti WIWIEN ANDRIYANTI Yoel Midel Leitabun Yoyon Wahyono Yoyon Wahyono Yunita Indriyani Yuyun, Yuyun Zaenal Arifin Zaenal Arifin Zaenul Muhlisin Zakiyah Rahmawati