Silicon Carbide/Polysilazane Composite: Effect of Temperature on the Densification, Phase, and Microstructure Evolution

Fiqhi Fauzi (Nano Center Indonesia, Jl. PUSPIPTEK, South Tangerang, Banten 15314, Indonesia)
Alfian Noviyanto (Nano Center Indonesia, Jl. PUSPIPTEK, South Tangerang, Banten 15314, Indonesia Department of Mechanical Engineering, Mercu Buana University, Jl. Meruya Selatan, Kebun Jeruk, Jakarta 11650, Indonesia)
Pipit Fitriani (Nano Center Indonesia, Jl. PUSPIPTEK, South Tangerang, Banten 15314, Indonesia)
Amirudin Wibowo (Research Center, Mercu Buana University, Jl. Meruya Selatan, Kebun Jeruk, Jakarta 11650, Indonesia)
Toto Sudiro (Research Center for Physics, National Research and Innovation Agency, PUSPIPTEK, South Tangerang, Banten 15314, Indonesia)
Didik Aryanto (Research Center for Physics, National Research and Innovation Agency, PUSPIPTEK, South Tangerang, Banten 15314, Indonesia)
Nurul Taufiqu Rochman (Research Center for Metallurgy and Materials, National Research and Innovation Agency, PUSPIPTEK, South Tangerang, Banten 15314, Indonesia)

Indonesian Journal of Chemistry
Vol 22, No 2 (2022)

This paper reports a route to suppress the grain growth in silicon carbide (SiC) during its sintering by combining it with polysilazane (PSZ). SiC was mixed with PSZ in a 1:1 weight ratio and sintered at 1600, 1700, and 1800 °C in a hot-pressing furnace. A satisfactory density was obtained at sintering temperatures > 1600 °C. The grain sizes of the SiC/PSZ composites sintered at 1700 and 1800 °C were 112 and 125 nm, respectively. The grain shape of the SiC/PSZ composite sintered at 1700 °C was circular and mainly similar to the initial shape of the SiC powder. Grain shape accommodation was observed at a sintering temperature of 1800 °C. It is suggested that different sample shapes were affected by different liquid phase formations. Silicon oxynitride (Si2N2O) was formed and played an important role in densification and microstructure generation.