Makara Journal of Technology
Vol. 17, No. 1

Analysis of Hole Lifetime in SOI MOSFET Single-Photon Detector

Putranto, Dedy Septono Catur (Unknown)
Du, Wei (Unknown)
Satoh, Hiroaki (Unknown)
Ono, Atsushi (Unknown)
Priambodo, Purnomo Sidi (Unknown)
Hartanto, Djoko (Unknown)
Inokawa, Hiroshi (Unknown)

Article Info

Publish Date
01 Apr 2013

Abstract

Hole lifetime in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) singlephoton detector was evaluated by the analysis of drain current histograms for different light intensities and substrate voltages. It was found that the peaks in the histogram corresponding to the larger number of stored holes grew as the gate bias decreased. This was attributed not to the increased light absorption efficiency or collection efficiency of the photo-generated holes, but to the prolonged hole lifetime presumably caused by the higher transverse electric field inside the body of SOI MOSFET.

Copyrights © 2013




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Journal Info
Makara Journal of Technology
Website

Abbrev

publication:mjt

Publisher

Universitas Indonesia

Subject

Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Engineering Materials Science & Nanotechnology Mechanical Engineering

Description

MAKARA Journal of Technology is a peer-reviewed multidisciplinary journal committed to the advancement of scholarly knowledge and research findings of the several branches of Engineering and Technology. The Journal publishes new results, original articles, reviews, and research notes whose content ...