Makara Journal of Technology
Vol. 22, No. 3

A 2.3/3.3-GHz Dual Band Low Noise Amplifier Using Switchable Load Inductor in 0.18-um CMOS Technology

Kurniawan, Taufiq Alif (Unknown)
Chen, Hsiao-Chin (Unknown)

Article Info

Publish Date
03 Dec 2018

Abstract

In this paper, the dual band low noise amplifier is designed in 0.18-μm CMOS technology. By combining the proposed switchable load inductor for gain controlling and the conventional inductive source degeneration topology, narrow band gain and good impedance matching are achieved at 2.3/3.3-GHz frequency bands. The new mathematical analysis of low noise amplifier design is derived to define the component parameters of the proposed circuits. The proposed low noise amplifier exhibits gain of 17.18 dB and 15.5 dB, and noise figure of 2.67 dB and 2.52 dB at the two frequency bands, respectively.

Copyrights © 2018




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Journal Info
Makara Journal of Technology
Website

Abbrev

publication:mjt

Publisher

Universitas Indonesia

Subject

Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Engineering Materials Science & Nanotechnology Mechanical Engineering

Description

MAKARA Journal of Technology is a peer-reviewed multidisciplinary journal committed to the advancement of scholarly knowledge and research findings of the several branches of Engineering and Technology. The Journal publishes new results, original articles, reviews, and research notes whose content ...