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All Journal Makara Journal of Technology International Journal of Electrical, Computer, and Biomedical Engineering (IJECBE)
Kurniawan, Taufiq Alif
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Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Computer Science & IT Electrical & Electronics Engineering Engineering Materials Science & Nanotechnology Mechanical Engineering Medicine & Pharmacology

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A 2.3/3.3-GHz Dual Band Low Noise Amplifier Using Switchable Load Inductor in 0.18-um CMOS Technology Kurniawan, Taufiq Alif; Chen, Hsiao-Chin
Makara Journal of Technology Vol. 22, No. 3
Publisher : UI Scholars Hub

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Abstract

In this paper, the dual band low noise amplifier is designed in 0.18-μm CMOS technology. By combining the proposed switchable load inductor for gain controlling and the conventional inductive source degeneration topology, narrow band gain and good impedance matching are achieved at 2.3/3.3-GHz frequency bands. The new mathematical analysis of low noise amplifier design is derived to define the component parameters of the proposed circuits. The proposed low noise amplifier exhibits gain of 17.18 dB and 15.5 dB, and noise figure of 2.67 dB and 2.52 dB at the two frequency bands, respectively.
A High Gain Concurrent Dual-band Low-Noise Amplifier in 130-nm BiCMOS Technology Kurniawan, Taufiq Alif; Maritza, Afiya
International Journal of Electrical, Computer, and Biomedical Engineering Vol. 2 No. 1 (2024)
Publisher : Universitas Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.62146/ijecbe.v2i1.15

Abstract

This paper presents a fully integrated concurrent 15/30-GHz dual-band low-noise amplifier (LNA). The proposed concurrent LNA IC is designed and simulated in 130-nm BiCMOS technology. The new passive LC notch filter is proposed to realize high gain and low noise figure over dual-band frequency, simultaneously. The simulated BiCMOS LNA IC has exhibited peak gains of 30.1/23.7 dB at 15/30-GHz, respectively, with 20-mW power consumption from 1-V supply. The concurrent dual-band LNA achieves noise figure of 2.2/2.9-dB and IIP3 of -18.2/-8.8 dBm at the respective passbands. Therefore, the proposed dual band concurrent LNA IC is applicable to front-end RF receivers for Ku-Band and Ka-Band systems.
Co-Authors Chen, Hsiao-Chin Maritza, Afiya