Simulasi Reaktor MOCVD Dengan Menggunakan FEMLAB

Budi Mulyanti (1) Laboratorium Fisika Material Elektronika, Departement Fisika, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, 2) Jurusan Pendidikan Teknik Elektro, Fakultas Pendidikan Teknologi dan Kejuruan, Universitas Pendidikan Indonesia, Jl. Setiabudhi 227)
Fitri S. Arsyad (1) Laboratorium Fisika Material Elektronika, Departement Fisika, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung, 2) Jurusan Fisika, Universitas Sriwijaya, Kampus FMIPA –Unsri, Jl. Perabumulih, Palembang)
Soegianto S (Laboratorium Fisika Teori, Departemen Fisika, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung 40132)
M. Barmawi (Laboratorium Fisika Material Elektronika, Departement Fisika, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung)
Sri Jatno W (Laboratorium Fisika Material Elektronika, Departement Fisika, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung)

Indonesian Journal of Physics (IJP)
Vol 13 No 2 (2002): Vol. 13 No.2, April 2002

Numerical simulation is presented in order to have optimal growth parameters when thin film GaN is grown in the MOCVD reactor. The simulation is performed by changing the growth parameters such as diffusivities and flow rates of gases, and the reactor’s geometries. Gases that are used in this simulation are trimethyl gallium (TMGa) and ammonia (NH3) as source gases and nitrogen (N2) as a carrier gas. The uniform thin film is obtained from this simulation, when the growth parameters are 0.1 m2s-1, 10-3ms-1, and 3.5 cm for gas diffusivity, gas flow rate and distance between reactor neck and substrate, respectively.