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Soegianto S
Laboratorium Fisika Teori, Departemen Fisika, Institut Teknologi Bandung, Jl. Ganesa 10 Bandung 40132
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Simulasi Reaktor MOCVD Dengan Menggunakan FEMLAB Budi Mulyanti; Fitri S. Arsyad; Soegianto S; M. Barmawi; Sri Jatno W
Indonesian Journal of Physics Vol 13 No 2 (2002): Vol. 13 No.2, April 2002
Publisher : Institut Teknologi Bandung

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Abstract

Numerical simulation is presented in order to have optimal growth parameters when thin film GaN is grown in the MOCVD reactor. The simulation is performed by changing the growth parameters such as diffusivities and flow rates of gases, and the reactor’s geometries. Gases that are used in this simulation are trimethyl gallium (TMGa) and ammonia (NH3) as source gases and nitrogen (N2) as a carrier gas. The uniform thin film is obtained from this simulation, when the growth parameters are 0.1 m2s-1, 10-3ms-1, and 3.5 cm for gas diffusivity, gas flow rate and distance between reactor neck and substrate, respectively.
Co-Authors Budi Mulyanti Fitri S. Arsyad M. Barmawi Sri Jatno W