Pengaruh Perlakuan Implantasi Hidrogen terhadap Sifat Struktur Lapisan Tipis Amorf Silikon Karbon (a-SiC:H) Hasil Deposisi Metode DC Sputtering

Rosari Saleh (Jurusan Fisika, Fakultas MIPA Universitas Indonesia, Depok 16424)
Lusitra Munisa (Program Studi Ilmu Fisika, Program Pascasarjana Universitas Indonesia, Jakarta 10430)

Indonesian Journal of Physics (IJP)
Vol 14 No 2 (2003): Vol. 14 No.2, April 2003

Infrared absorption measurement of hydrogenated amorphous silicon carbon films (a-SiC:H) deposited by dc sputtering method have been performed for prior- and after hydrogen implantation. The films were deposited by silicon target in argon and methane gas mixtures. The results suggest that both 720 and 780 cm-1 absorption are due to Si-C stretching mode and the transition of the absorption from 2000 to 2100 cm-1 as the methane flow rate increase is not due to a change in carbon concentration, but rather to the formation of voids as supported by hydrogen effusion experiment results.