Comparison of Electron Direct Transmittance and Tunneling Time of Si (100)/HfO2/Si (100) and Si (110)/HfO2/Si (110) Structures with Ultra-thin Trapezoidal Barrier

Fatimah A. Noor (Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung)
Mikrajuddin Abdullah (Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung)
Sukirno Sukirno (Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung)
Khairurrijal Khairurrijal (Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung)

Indonesian Journal of Physics (IJP)
Vol 18 No 2 (2007): Vol. 18 No. 2 April 2007

An analytical expression of electron direct transmittance and tunneling time through a nanometer-thick trapezoidal potential barrier have been derived by using a phase-time method with Airy wavefunction solution. The expression is applied to Si(100)/HfO2/Si(100) (isotropic) and Si(110)/HfO2/Si(110) (anisotropic) structures calculated under the consideration of barrier width, incident energy, incident angle, and bias voltage. The calculated results are discussed and comparisons between the isotropic and anisotropic heterostructures are discussed.