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Mikrajuddin Abdullah
Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Comparison of Electron Direct Tunneling Time in a Heterostructure with a Nanometer-Thick Trapezoidal Barrier Calculated Using Exponential and Airy Wavefunctions Fatimah A. Noor; Mikrajuddin Abdullah; Sukirno Sukirno; Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 18 No 1 (2007): Vol. 18 No. 1, January 2007
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (144.833 KB)

Abstract

Analytical expressions of electron direct transmittance and tunneling time in a heterostructure with a nanometer-thick trapezoidal barrier have been derived by using the Airy wavefunctions. The analytic expressions are applied to the Si (100)/SiO2/Si (100) heterostructure. It has been found that the electron direct transmittance and tunneling time are suitably calculated by employing the Airy wavefunction as compared to those obtained under the exponential wavefunction. It has also been found that the calculated electron direct transmittance and tunneling time under the Airy wavefunction are the same as those under the exponential wavefunction for very low bias voltage and low electron incident energy.
Comparison of Electron Direct Transmittance and Tunneling Time of Si (100)/HfO2/Si (100) and Si (110)/HfO2/Si (110) Structures with Ultra-thin Trapezoidal Barrier Fatimah A. Noor; Mikrajuddin Abdullah; Sukirno Sukirno; Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 18 No 2 (2007): Vol. 18 No. 2 April 2007
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (197.48 KB) | DOI: 10.5614/itb.ijp.2007.18.2.1

Abstract

An analytical expression of electron direct transmittance and tunneling time through a nanometer-thick trapezoidal potential barrier have been derived by using a phase-time method with Airy wavefunction solution. The expression is applied to Si(100)/HfO2/Si(100) (isotropic) and Si(110)/HfO2/Si(110) (anisotropic) structures calculated under the consideration of barrier width, incident energy, incident angle, and bias voltage. The calculated results are discussed and comparisons between the isotropic and anisotropic heterostructures are discussed.
Electron Transmittance through a Heterostructure on Anisotropic Materials using the Airy Function and the Transfer Matrix Method Lilik Hasanah; Adi Bagus Suryamas; Khairurrijal Khairurrijal; Mikrajuddin Abdullah; Toto Winata; Sukirno Sukirno
Indonesian Journal of Physics Vol 18 No 4 (2007): Vol. 18 No. 4, October 2007
Publisher : Institut Teknologi Bandung

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Abstract

Derivation of the transmittance of an electron incident on a heterostructure potential with nanometer-thick trapezoidal barrier grown on anisotropic materials is done by solving the effective-mass equation including off-diagonal effective-mass tensor elements. The analytic expressions are applied to the Si(110)/Si0.5Ge0.5/Si(110) heterostructure. It is assumed that the direction of propagation of the electrons makes an arbitrary angle with respect to the interfaces of the heterostructure and the effective mass of the electron is position dependent. The calculation of transmittances is done for incident energy at z direction below and above the barrier height by varying the applied voltage to the barrier. The maximum transmittance depends on the incident energy and the bias voltage given to the potential barrier. The transmittance value obtained from the Airy function has the same value obtained from the transfer matrix method. It was also found that the transmittance depends on the valley and it is not symmetric with the incident angle.
Co-Authors Adi Bagus Suryamas Fatimah A. Noor Khairurrijal Khairurrijal Lilik Hasanah Sukirno Sukirno Toto Winata