Indonesian Journal of Physics (IJP)
Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009

Interdiffusion of InxGa1-xAs/InP Quantum Well Structures Induced by Proton Implantation

Paulus L. Gareso (Department of Physics, Hasanuddin University, Makassar)

Article Info

Publish Date
03 Nov 2016

Abstract

We have investigated the atomic intermixing of InxGa1-xAs/InP quantum well structures induced by proton implantation using photoluminescence. Photoluminescence results showed that energy shift was systematically increased as doses increased. As the dose further increased, Saturation in energy shift was observed. At elevated temperature irradiation revealed that the magnitude of the energy shift decreased as the irradiation increased followed by a broadening of the PL linewidth and reduction of the PL intensity. This indicated that dynamic annealing and mobility of the defects play an important role in the type and concentration of residual defects.

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Journal Info
Indonesian Journal of Physics (IJP)
Website

Abbrev

ijp

Publisher

Institut Teknologi Bandung

Subject

Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

Description

Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, ...