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Paulus L. Gareso
Department of Physics, Hasanuddin University, Makassar
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Interdiffusion of InxGa1-xAs/InP Quantum Well Structures Induced by Proton Implantation Paulus L. Gareso
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (56.515 KB) | DOI: 10.5614/itb.ijp.2009.20.1.1

Abstract

We have investigated the atomic intermixing of InxGa1-xAs/InP quantum well structures induced by proton implantation using photoluminescence. Photoluminescence results showed that energy shift was systematically increased as doses increased. As the dose further increased, Saturation in energy shift was observed. At elevated temperature irradiation revealed that the magnitude of the energy shift decreased as the irradiation increased followed by a broadening of the PL linewidth and reduction of the PL intensity. This indicated that dynamic annealing and mobility of the defects play an important role in the type and concentration of residual defects.
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