Jurnal INFOTEL
Vol 10 No 1 (2018): February 2018

Perancangan Penguat Daya L-Band Menggunakan Transistor GaAs p-HEMT MMG15241H Berbasis Mikrostrip

Rifki Amiruddin (Universitas Telkom)
Budi Syihabuddin (Universitas Telkom)
Yuyu Wahyu (Lembaga Ilmu Pengetahuan Indonesia (LIPI))

Article Info

Publish Date
01 Feb 2018

Abstract

The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 - 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.

Copyrights © 2018




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Journal Info
Jurnal INFOTEL
Website

Abbrev

infotel

Publisher

Universitas Telkom

Subject

Computer Science & IT Electrical & Electronics Engineering

Description

Jurnal INFOTEL is a scientific journal published by Lembaga Penelitian dan Pengabdian Masyarakat (LPPM) of Institut Teknologi Telkom Purwokerto, Indonesia. Jurnal INFOTEL covers the field of informatics, telecommunication, and electronics. First published in 2009 for a printed version and published ...