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Yuyu Wahyu
Lembaga Ilmu Pengetahuan Indonesia (LIPI)
Computer Science & IT Electrical & Electronics Engineering

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Perancangan Penguat Daya L-Band Menggunakan Transistor GaAs p-HEMT MMG15241H Berbasis Mikrostrip Rifki Amiruddin; Budi Syihabuddin; Yuyu Wahyu
JURNAL INFOTEL Vol 10 No 1 (2018): February 2018
Publisher : LPPM INSTITUT TEKNOLOGI TELKOM PURWOKERTO

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.20895/infotel.v10i1.331

Abstract

The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 - 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.
Co-Authors Budi Syihabuddin Rifki Amiruddin