<![CDATA[The paper presents the performance evaluation of physical properties on Zinc Sulfide (ZnS)-based Field Effect Transistor. The most famous III-V compound-based semiconductor devices have several affected to the environment and the toxic contents are directly responded to the society. Due to the lack of technology on nontoxic compound-based semiconductor device fabrications, the novel device with II-VI compound materials are challenging issues for the environments. The specific objectives of doing research on fabrication of II-VI compound-based semiconductor devices in advanced laboratories are to emphasize the numerical modeling of the device structure and designing the FET based on ZnS material, to contribute the mathematical model for physical characteristics of the FET structure and the modification of the device structure will be easily established by using numerical simulation. The mathematical analyses on physical properties of device structure with ZnS material are confirmed and observed the several properties of electrical and electronic characteristics. The detailed implementations for ZnS-based FET devices are performed and evaluated the performance of the developed FET devices. There are two steps analyses in physical properties of ZnS-based FET devices with numerical implementation by MATLAB languages. The results observed in this study could be confirmed with the recent works from several research laboratories and the developed ZnS-based FET devices could be utilized in high performance wide band applications on switching in the power electronics and amplification purposes in modern amplifier design in real world applications.]]>
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