IJOT
Vol. 4 No. 6 (2022): IJOT

Influence of Impurity Atoms of Gallium and Antimony on the Concentration of Optically Active Oxygen in the Silicon Lattice

Isakov, B. O. (Unknown)
Rakhmonov, B. R. (Unknown)
Subkhonberdiev, Sh. N. (Unknown)

Article Info

Publish Date
07 Jun 2022

Abstract

The effect of impurity atoms of gallium and antimony on the concentration of optically active oxygen in the silicon lattice is studied. It is shown that the oxygen concentration in silicon samples doped with gallium decreases by 87.2%, doped with antimony decreases by 99.2%, and in the case of doping with gallium and antimony decreases simultaneously only by 28.7%. These results can be explained by the chemical interaction of gallium and antimony atoms, which leads to the restoration of the oxygen concentration in optical active centers.

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Journal Info
IJOT
Website

Abbrev

IJOT

Publisher

Research Parks Publishing

Subject

Automotive Engineering Computer Science & IT Control & Systems Engineering Engineering Industrial & Manufacturing Engineering Materials Science & Nanotechnology

Description

International Journal on Orange Technologies (IJOT) is an online international peer-reviewed journal that publishes high-quality original scientific papers, short communications, correspondence, and case studies in areas of research, development, and applications of orange technology and ...