<![CDATA[The rapid development of electronic technology increases the need for smaller, lighter, and more efficient power adapters, especially in portable devices such as laptops. This research focuses on designing a 200 watt power adapter using Gallium Nitride (GaN) based semiconductors as an alternative to silicon (Si). GaN has advantages in terms of higher switching speed, lower resistance, and better heat dissipation, allowing for reduced adapter size and weight. The methods used in this research include circuit simulation using LTspice and 3D design using Fusion360. The research results show that GaN-based power adapters have lower power dissipation compared to silicon in each switching frequency range tested (100 kHz – 500 kHz). Volume analysis shows that GaN adapters are more compact than silicon-based adapters, with the most optimal volume at a frequency of 300 kHz, namely 293.81 cm³, compared to silicon which reaches 545.60 cm³. In terms of weight, GaN adapters are lighter, with the lowest weight being 118.49 grams at a frequency of 400 kHz, while silicon-based adapters reach 3,337.92 grams. Keywords—Power adapter, Gallium Nitride (GaN), forward converter, size and weight. ]]>
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