<![CDATA[As semiconductor devices become smaller, FinFETs have replaced traditional planar MOSFETs. Planar devices face issues like weak electrostatic control and high leakage current at small sizes. FinFETs solve these problems with a three-dimensional structure and multigate design. This improves gate control and reduces short-channel effects. This paper explains FinFET design, materials, and fabrication methods. It highlights how fin geometry affects current flow and device performance. Gate-source voltage (VGS) and drain-source voltage (VDS) are important parameters. These control the device operation in the lin-ear, saturation, and pinch-off regions. Performance factors such as on/off current ratio (ION /IOFF), subthreshold swing (SS), and drain-induced barrier lowering (DIBL) show that FinFETs work well for low-power and high-speed uses. Achieving uniform doping below 5 nm remains difficult. Atomic layer deposition (ALD) helps improve doping control. In summary, FinFETs play a key role in modern semiconductor design by improving scalability and efficiency.]]>
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