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All Journal International Journal of Electrical and Computer Engineering
Al Islam, Md Faiaz
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Computer Science & IT Electrical & Electronics Engineering

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FinFET technology: a comprehensive review on materials, structures, fabrication, and device performance Rahman, Yead; Al Islam, Md Faiaz; Islam, Nafiya; Hassan, Sunzid; Shuvo, Sabbir Alom; Nabi, Iftesam; Alam, Jarif Ul
International Journal of Electrical and Computer Engineering (IJECE) Vol 16, No 1: February 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v16i1.pp89-101

Abstract

As semiconductor devices become smaller, FinFETs have replaced traditional planar MOSFETs. Planar devices face issues like weak electrostatic control and high leakage current at small sizes. FinFETs solve these problems with a three-dimensional structure and multigate design. This improves gate control and reduces short-channel effects. This paper explains FinFET design, materials, and fabrication methods. It highlights how fin geometry affects current flow and device performance. Gate-source voltage (VGS) and drain-source voltage (VDS) are important parameters. These control the device operation in the lin-ear, saturation, and pinch-off regions. Performance factors such as on/off current ratio (ION /IOFF), subthreshold swing (SS), and drain-induced barrier lowering (DIBL) show that FinFETs work well for low-power and high-speed uses. Achieving uniform doping below 5 nm remains difficult. Atomic layer deposition (ALD) helps improve doping control. In summary, FinFETs play a key role in modern semiconductor design by improving scalability and efficiency.
Co-Authors Alam, Jarif Ul Hassan, Sunzid Islam, Nafiya Nabi, Iftesam Rahman, Yead Shuvo, Sabbir Alom