<![CDATA[Modern non-volatile memory technology relies heavily on quantum tunneling, which allows electrons to pass through insulating barriers that are otherwise impenetrable. This paper investigates the use of tunneling methods in flash memory designs to provide high-density and scalable storage. Reviewing tunneling physics in floating-gate and charge-trap memory, assessing barrier-engineering techniques, and investigating scalability options are the goals. Fourteen chosen publications published between 2010 to 2025 were the subject of a systematic literature review (SLR) with an emphasis on high-k dielectric materials, nanoscale device design, and tunneling-barrier engineering. The findings demonstrate that leakage can be decreased while programming efficiency is maintained by improving barrier thickness and dielectric characteristics. Furthermore, the advancement of 3D NAND technology depends heavily on sophisticated materials and device structures. This study indicates that quantum tunneling is still the key mechanism enabling next-generation scalable non-volatile memory, notwithstanding the reliability issues it introduces.]]>
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