<![CDATA[Efficiency optimization of an InGaN-based blue light-emitting diode (LED) is performed by analyzing the electron blocking layer (EBL), current spreading layer (CSL), and multiple quantum well (MQW) active region. Analytical calculations and MATLAB simulations are used to evaluate the device performance. Three InGaN/GaN quantum wells are selected for the active region, and an internal quantum efficiency (IQE) of 76% is obtained. The optimized EBL provides an efficiency of 96.57%, while the optimized CSL achieves 99.9962%. The overall LED efficiency is calculated from the efficiencies of the MQW, EBL, and CSL, giving an optimized value of approximately 73.39%. Based on the calculated results, the optimized EBL effectively suppresses electron leakage and improves carrier confinement. The optimized CSL also enhances current spreading, leading to better radiative recombination in the MQW region. The obtained results confirm that the proposed structural optimization improves the efficiency and performance of InGaN-based blue LEDs for solid-state lighting, display technology, and optical communication applications.]]>
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