<![CDATA[Wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) enable higher switching frequencies, greater efficiency, and increased power density, but their fast-switching transients and steep dv/dt and di/dt characteristics generate substantially elevated electromagnetic interference (EMI). This review synthesizes peer-reviewed studies to quantitatively compare EMI mitigation outcomes across source-side modulation, gate-driving, filtering, packaging, and AI-based techniques for WBG converters. Packaging-integrated common-mode screens cut CM current by up to 26 dB while raising partial-discharge inception voltage by 53%. Chaotic PWM with passive filtering reaches up to 50 dB attenuation with a 74% reduction in inductor volume. AI-based closed-loop adaptation attains up to 19.2 dB average attenuation with 98.5% CISPR 25 compliance, while RL-based filters reach 25-30 dB across wide frequency ranges. Active gate-driving reduces peak EMI by 19-39 dB. No single technique simultaneously delivers the highest suppression, efficiency, and lowest cost. Hybrid Si/WBG design currently offers the most balanced trade-off. These outcomes are consolidated into a taxonomy of propagation mechanisms, mitigation techniques, application-specific strategies across five domains, and open gaps in standardized testing and validation. These findings provide a practical, quantitative reference for engineers designing next-generation, EMC-compliant WBG power electronic systems.]]>
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