CVD PREPARED Mn-DOPED ZnO NANOWIRES

T.L. Phan (Microstructures Group, Department of Physics, University of Bristol, Bristol BS8 1TL)
R. Vincent (Microstructures Group, Department of Physics, University of Bristol, Bristol BS8 1TL)
D. Cherns (Microstructures Group, Department of Physics, University of Bristol, Bristol BS8 1TL)
N.X. Nghia (Institute of Materials Science, Academy of Science and Technology (VAST), Hanoi)

ASEAN Journal on Science and Technology for Development
Vol. 24 No. 1-2 (2007): ASEAN Journal on Science and Technology for Development (AJSTD)

Mn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM images indicate that crystals with a hexagonal structure grow along the c axis. At low Mn-doped concentrations, photoluminescence (PL) and Raman scattering (RS) spectra are almost independent of the Mn doping. However, the increase in concentration of Mn above 1.6 at% weakens significantly the PL signal and the RS-lines intensity in the low wavenumber range of 300–480 cm-1, and concurrently increases the RS-lines intensity in the higher wavenumber range of 480-700 cm-1.. Magnetic measurements determined the Curie temperature of Mn-doped ZnO nanowire to be about 37 K.