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Journal of Mathematical and Fundamental Sciences
Published by Institut Teknologi Bandung
ISSN : 23375760     EISSN : 23385510     DOI : https://doi.org/10.5614/j.math.fund.sci.
Core Subject : Science, Education,
Astronomy Chemistry Earth & Planetary Sciences Mathematics Physics
Journal of Mathematical and Fundamental Sciences welcomes full research articles in the area of Mathematics and Natural Sciences from the following subject areas: Astronomy, Chemistry, Earth Sciences (Geodesy, Geology, Geophysics, Oceanography, Meteorology), Life Sciences (Agriculture, Biochemistry, Biology, Health, Medical, Pharmacy), Mathematics, Physics, and Statistics.
Arjuna Subject : Matematika - Matematika (Lain-Lain)
Articles 7 Documents
 1 
Search results for , issue "Vol. 33 No. 1 (2001)" : 7 Documents clear
Effects of Substrate Temperature on Vacuum Deposited Thin Film of Disperse Red 1 on ITO Glass H. Taunaumang; Herman Herman; M. O. Tjia
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. Highly crystalline thin films of photorefractive Disperse Red 1 (DR 1) molecule have been fabricated on clean substrate of ITO (indium tin oxide) glass by means of physical vapor deposition at various substrate temperatures. In addition to molecular orientation and organization revealed by their XRD and FTIR spectral characteristic and the enhancement of those effects by substrate temperature, further analysis of FTIR spectrum around nitrobenzene absorption band indicates the formation of strong hydrogen bond resulting in a head-tail stacking of the molecules. The deposited films also show systematic reduction of light absorption in the visible region with increasing substrate temperature. This modification of the optical property is clearly favorable for long wavelength photonic applications of DR1 film. Pengaruh Suhu Substrat pada Film Tipis 'Disperse Red 1' yang Dideposisi pada Gelas ITO dalam VakumSari. Dalam eksperimen ini telah berhasil diperoleh melalui proses deposisi vakum sejumlah film tipis bahan fotorefraktif dari molekul "Disperse Red 1" (DR1) dengan krisalinitas tinggi di atas substrat gelas ITO ("indium tin oxide") pada berbagai suhu. Selain efek orientasi dan organisasi molekul yang ditunjukkan oleh karakteristik spectra XRD dan FTIR bersangkutan serta peningkatan efek tersebut dengan suhu substrat, analisis lebih lanjut dari data FTIR di sekitar pita absorpsi nitrobenzene telah mengungkapkan tanda embentukan ikatan hydrogen yang kuat yang menghasilkan susunan "head-tail" yang bertumpuk. Film yang terdeposisi juga memperkihatkan pengurangan absorpsi cahaya secara sistematik di daerah tampak, seiring dengan peningkatan suhu substrat. Perubahan sifat optik ini jelas bermanfaat bagi aplikasi film DR1 untuk devais fotonik dalam daerah gelombang panjang.
Effect of Annealing Treatment on the Optical Properties of Zinc Oxide (ZnO) thin film prepared by MOCVD Iis Nurhasanah; Priyono Priyono; Wilson W Wenas
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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The annealing treatment of ZnO thin film at various temperatures was performed. The effect of this treatment on the optical properties of ZnO thin film were investigated in order to apply this film to optoelectronic devices. The optical transmittance spectra  were measured and it was found that the transmittance in UV-VIS region decreased with annealing temperature . The loss of light is mainly due to  the increase of carrier density, resulting from increased oxygen vacancies during the annealing process at 300°C. It was also found that the absorption edge shifted to lower energy when the film was annealed at 300°C in air.
Effect of B-doping on the Crystal Structural and Optical Properties of Zinc Oxide Thin Films for Photonic Devices Fery Adriyanto; Usman Santosa; Riyatun Riyatun; Wilson W. Wenas
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. Effect of B-doping B2H6 on the crystal structural and optical properties of zinc oxide (ZnO) thin films has been studied. The crystal orientation of these films were evaluated  by X-ray diffraction. It was found that the (110) reflection peak was dominant for all the film and became less pronounced as B2H6 flow rate was increased. The grain size of thin film decreased as B2H6 flow rate was increased. The transmittance in the ultraviolet  wavelengths region shifted to higher energy as the B2H6 flow rate was increased. I t was also found that refractive index of ZnO thin films increased as the B2H6 flow rate was further increased. These doping effects should be minimized  in order to grow low resistivity ZnO film with excellent optical properties for application to photonic devices. Efek Doping Boron (B) terhadap Struktur Kristal dan Sifat Optik Lapisan Tipis ZnO untuk Divais OptoelektronikSari. Telah dilakukan studi tentang pengaruh doping B2H6 terhadap struktur Kristal dan sifat optic lapisan tipis ZnO. Orientasi kristal lapisan tipisnya dievaluasi dengan difraksi sinar-x. Diperoleh bahwa puncak refleksi (110) mendominasi seluruh film dan berkurang sejalan dengan penambahan laju aliran B2H6. Ukuran butir Kristal dari film juga berkurang sejalan dengan penambahan laju aliran B2H6. Transmitnasi pada daerah panjang gelombang ultra violer bergeser ke arah energy yang lebih tinggi sejalan dengan penambahan laju aliran B2H6. Ditemukan pula bahwa indeks bias lapisan tipis ZnO bertambah sejalan dengan penambahan laju aliran B2H6. Efek-efek doping tersebut harus diminimalkan agar dapat diperoleh lapisan ZnO beresistivitas rendah dengan sifat optik yang baik untuk aplikasi pada divais fotonik. 
Simulation and Fabrication of Double Barrier Structure of P-I-N Amorphous Silicon (a-Si) Device Ida Hamidah; Kardiawarman Kardiawarman; Budi Mulyanti; Andi Suhandi
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. The application of double barrier (DB) structure in p-i-n amorphous silicon (a-Si) device was studied. The theoretical study was done to obtain device parameters such as tunneling probability and current density. The tunneling probability was calculated by employing the Schroedinger equation, WKB approximation and Green function. Width of potential well, width and height of barrier were varied to obtain the highest tunneling probability value. The current density was contributed by diffusion, and tunneling current densities. It was found that current density had a peak of 3950 A/m2 at 0.56 volt forward bias. Furthermore, the fabrication of p-i-n a-Si device with double barrier structure was successfully carried out. To realize the double barrier structure, optimization of optical band gap of barrier a-SiC:H was done by varying ratio of CH4 to [CH4+SiH4]. The fabrication of p-i-n a-Si device was then done by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique with a structure of glass substrate/TCO/p-a-Si:H (2.15 eV;140Ã…)/i-a-Si:H (1.81 eV;1800 Ã…)/barrier a-SiC:H (2.36 eV;45 Ã…)/potential well i-a-Si:H (1/81 eV; 30 Ã…)/barrier a-SiC:H (2.36 eV; 45 Ã…)/n-a-Si:H (1.81 eV;180 Ã…)/Al. The I-V characteristic of the device showed a peak current calue at 0.55 forward bias. Simulasi dan Fabrikasi Struktur Double Barrier pada Divais Amorphous SiliconSari. Aplikasi struktur double barrier (DB) pada divais amorphous silicon (a-Si) telah dilakukan untuk memperoleh beberapa parameter divais seperti probabilitas tunneling dan rapat arus. Probabilitas tunneling dihitung dengan menerapkan persamaan Schroedinger, pendekatan WKB dan fungsi Green. Lebar sumur potensial, lebar dan tinggi barrier telah divariasikan untuk memperoleh harga probabilitas tunneling yang maksimum. Rapat arus total dari divais dalam perhitungan ini merupakan jumlah dari rapat arus difusi dan rapat arus tunneling. Diperoleh bahwa rapat arus total memiliki nilai maksimum sebesar 3950 A/m2 pada tegangan bias maju 0,56 volt. Selanjutnya, telah berhasil juga difabrikasi divais p-i-n a-Si dengan struktur double barrier. Didapatkan bahwa karakteristik I-V dari divais menunjukkan adanya puncak rapat arus pada tegangan bias maju 0,55 volt.ihamidah@eudoramail.com
A Study of Quantum dots of GaSb M. Barmawi; Sugianto Sugianto; R.A. Sani; Euis Sustini; P. Arifin; M. Budiman
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. Quantum Dots is a nano structured materials, which is an interesting object for fundamental study as well as for applications. Quantum Dots has been used for optoelectronic devices, such as fast detectors and for lasers. In this paper we report preliminary results of the preparation of quantum dots of GaSb in our laboratory. These dots are prepared by self-organized growth by MOCVD, using Trymethylgalium and Tridismethylaminoantimonat  as metal organic sources and using GaAs as substrate. The results are studied by Scanning Electron Microscope. We propose further characterization of these quantum dots. Studi Mengenai Titik Kuantum GaSbSari. Quantum Dot adalah material yang mempunyai struktur nano, yang merupakan objek untuk penelitian fundamental maupun untuk penerapannya. Dalam makalah ini dilaporakan hasil-hasil yang pertama yang kita peroleh dalam pembuatan Quantum Dot dari GaSb dalam laboratorium kami. Quantum Dot ini telah ditumbuhkan dengan menggunakan penumbuhan yang "selforganized" dengan reactor MOCVD dengan mempergunakan Trimetilgalium dan Trisdismetilantimonat sebagai sumber-sumber metalorganic dan GaAs digunakan sebagai substrat. Hasilnya ditelaah dengan menggunakan SEM. Telat disarankan karakterisasi lanjutan yang harus dilakukan. 
MOCVD Growth of GaSb and Al GaSb E. Sustini; Sugianto Sugianto; P. Arifin; M. Barmawi
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low noise in APD. In this paper we report the frowth of GaSb and AlGaSb in a home made vertical MOCVD reactor using trymethylgalium (TMGa), trymethylalumunium (TMAl) and tridismethylaminiantimonat (TDMASb) as metalorganic sources. In the reactor we used a flow guide to obtain uniform layers. The effect of growth temperature and the V/III ratio on the structural properties, surface morphology, optical and electronic properties is presented. Penumbuhan GaSb dan AlGaSb dengan MOCVDSari. GaSb dam AlGaSb adalah semikonduktor paduan yang mempunyai selah energi yang sempit, dewasa ini sangat menarik mengingat penerapannya dalam optoelektronika di daerah inframerah yang dekat dan yang menengah. Perbandingan dari koefisien ionisasi dari lubang dan electron merupakan faktor yang menentukan dalam APD yang mempunyai respons yang cepat dan derau yang rendah. Dalam tulisan ini penulis melaporkan penumbujan dari GaSb dan AiGaSb dalam reactor MOCVD yang vertikal yang telah dibangun sendiri dengan menggunakan trimetilgalium (TMGa), trimetilaluminium (TMAI) dan trisdismetilaminoantimonat sebagai sumber-sumber metal-organik. Reaktor tersebut mempergunakan pemandu aliran untuk memperoleh lapisan dengan ketebalan yang uniform. Disini disajikan pengaruh dari temperature penumbuhan dan perbandingan V/III pada sifat-sifat struktur, morfologi permukaan, sifat-sifat optic dan sifat-sifat listriknya.
Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD Sugianto Sugianto; A. Subagio; Erzam Erzam; R.A. Sani; M. Budiman; P. Arifin; M. Barmawi
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. We have studied the effect of hydrogen plasma on GaN film, grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). GaN films grown on a sapphire (0001) without the buffer layer have a polycrystalline structure. While films grown using the buffer layer tends to have a single crystal orientation. We have tried to increase the growth rate by varying the TMGa:N ratio. We found that the growth rate of the films were 450 nm/h with TMGa:N ratio of 1:600. However the films show a polycrystalline structure. Using hydrogen plasma during the growth, we have shown by XRD analysis that the films structure was highly oriented in (0002) plane  parallel to substrate and the crystalline quality is improved. Epitaksi Film GaN dengan MOCVD Berbatuan Plasma HidrogenSari. Telah dipelajari efek dari plasma hydrogen pada film Gan, yang ditumbuhkan dengan MOCVD yang dibantu dengan plasma. Film GaN ditumbuhkan di atas safir (0001) tanpa bantuan lapisan penyangga mempunyai struktur polikristalin. Sedangkan film yang ditumbuhkan dengan bantuan lapisan penyangga mempunyai kecenderungan membentuk Kristal dengan orientasi tunggal. Telah dicoba untuk menaikkan kecepatan pertumbuhan Kristal dengan mengubah-ubah perbandingan TMGa:N. Telah diperoleh kecepatan pertumbuhannya menjadi 450nm/jam bila perbandingan tersebut 1:600, akan tetapi strukturnya memperlihatkan sifat polikristal. Dengan bantuan plasma hidrogen analisis XRD menunjukkan bahwa orientasi film sejajar dengan arah (0002) dan sifat kristalnya dapat diperbaiki.

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