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All Journal Bulletin of Electrical Engineering and Informatics Indonesian Journal of Electrical Engineering and Computer Science International Journal of Renewable Energy Development
Arith, Faiz
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Control & Systems Engineering Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Impact of high-k insulators on electrical properties of junctionless double gate strained transistor Kaharudin, Khairil Ezwan; Salehuddin, Fauziyah; Mohd Zain, Anis Suhaila; Jalaludin, Nabilah Ahmad; Arith, Faiz; Mat Junos, Siti Aisah; Ahmad, Ibrahim
Indonesian Journal of Electrical Engineering and Computer Science Vol 36, No 3: December 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v36.i3.pp1437-1447

Abstract

High-k dielectric insulators are required to reduce leakage and increase transistor performance. They are able to impact the mobility of carriers in transistors positively, leading to better device performance in advanced transistor architecture. Nevertheless, an in-depth analysis of how high-k dielectric insulators influence transistor characteristics must be carried out to determine their suitability. The objective of this study is to investigate the impact of high-k insulators towards electrical properties of junctionless double gate strained transistor. The simulation works is done using process/device simulator Silvaco Athena/Atlas. Based on the retrieved results, the magnitude of ION, on-off ratio, gm, and Cint for TiO2-based device are approximately 63%, 99%, 62%, and 89% respectively higher than the lowest permittivity material-based device. The TiO2-based device also exhibits the lowest magnitude in IOFF and SS compared to others. However, a significant degradation in fT magnitude have been observed for TiO2-based device significantly due to its large capacitances
Optimization of perovskite solar cell with MoS2-based HTM layer using hybrid L27 Taguchi-GRA based genetic algorithm Ezwan Kaharudin, Khairil; Salehuddin, Fauziyah; Ahmad Jalaludin, Nabilah; Suhaila Mohd Zain, Anis; Arith, Faiz; Aisah Mat Junos, Siti; Ahmad, Ibrahim
Bulletin of Electrical Engineering and Informatics Vol 14, No 1: February 2025
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v14i1.8455

Abstract

This article proposes an optimization method to predictively model the perovskite solar cell with molybdenum disulfide (MoS2) based inorganic hole transport material (HTM) for improved fill factor (FF) and power conversion efficiency (PCE) by finding the most optimum thickness and donor/acceptor concentration for each layer via a hybrid L27 Taguchi grey relational analysis (GRA) based genetic algorithm (GA). Numerical simulation of the device is carried out by employing one-dimensional solar cell capacitance simulator (SCAPS-1D) while the optimization procedures are developed based on combination of multiple methods; L27 Taguchi orthogonal array, GRA, multiple linear regression (MLR), and GA. The results of post-optimization reveal that the most optimum layer parameters for improved FF and PCE are predicted as follows; SnO2F thickness (0.855 μm), SnO2F donor concentration (9.206×1018 cm-3), TiO2 thickness (0.011 μm), TiO2 donor concentration (9.306×1016 cm-3), CH3NH3PbI3 thickness (0.897 μm), CH3NH3PbI3 donor concentration (0.906×1013 cm-3), MoS2 thickness (0.154 μm), and MoS2 acceptor concentration (9.373×1017 cm-3). Both FF and PCE of the device are improved by ~1.1% and ~12.6% compared to the pre-optimization.
Formulation of Nb-doped ZnO nanoparticles towards improved photo conversion performance via luminescent down-shifting of the incident spectrum Jusoh, Yaumee Natasha; Aliyaselvam, Omsri Vinasha; Zainal, Nurul Aliyah; Mustafa, Ahmad Nizamuddin; Mohd Shah, Ahmad Syahiman; Salehuddin, Fauziyah; Arith, Faiz
International Journal of Renewable Energy Development Vol 14, No 3 (2025): May 2025
Publisher : Center of Biomass & Renewable Energy (CBIORE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.61435/ijred.2025.60983

Abstract

The quest for optimal solar energy utilization has prompted an investigation into materials and techniques, establishing luminescent down shifting (LDS). This method converts short-wavelength photons into longer wavelengths thus expanding the range of absorption. This may further enhance the efficiency of solar cell power conversion. Herein, the Zinc Oxide (ZnO) nanoparticle is introduced as a promising candidate for LDS, mainly due to its ability to convert light effectively and cost-savvy. This research delves into enhancing Niobium (Nb) doped ZnO particles that exhibit photoluminescent characteristics to improve energy conversion efficiency. The synthesis of 1% mol of Nb-doped ZnO nanoparticles on indium tin oxide (ITO) films was achieved using a low-temperature hydrothermal technique, varying the growth duration. Extensive analysis using XRD, SEM, and UV-Vis spectroscopy revealed that the optimal outcomes were achieved with an 8-hour growing period. The analysis revealed a hexagonal wurtzite crystal structure, characterized by prominent peaks on the (111) plane and a crystallite size of 37.18 nm. A morphology study indicated that the ZnO nanorods exhibited a randomly uniform oriented arrangement and a densely formed structure measuring 0.77 ± 0.02 μm. The samples exhibited promising optoelectronic properties based on the analysis, such as a characteristic bandgap of 3.35 eV, a transmittance of 46.54%, and an absorbance of 0.33 a.u .Furthermore, the electrical conductivity of the Nb-doped ZnO films was recorded at 1.62 mΩ⁻¹cm⁻¹.These findings suggest that controlling the Nb growth offers a promising avenue for optimizing the performance of Nb:ZnO nanoparticles for advanced solar energy conversion applications.
Co-Authors Ahmad Jalaludin, Nabilah Aisah Mat Junos, Siti Aliyaselvam, Omsri Vinasha Ezwan Kaharudin, Khairil Ibrahim Ahmad Jalaludin, Nabilah Ahmad Jusoh, Yaumee Natasha Kaharudin, Khairil Ezwan Mat Junos, Siti Aisah Mohd Shah, Ahmad Syahiman Mohd Zain, Anis Suhaila Mustafa, Ahmad Nizamuddin Salehuddin, Fauziyah Suhaila Mohd Zain, Anis Zainal, Nurul Aliyah