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All Journal POSITRON TIN: TERAPAN INFORMATIKA NUSANTARA
Syuhada, Ibnu
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Implementasi Algoritma Arithmetic Coding dan Sannon-Fano Pada Kompresi Citra PNG Syuhada, Ibnu
TIN: Terapan Informatika Nusantara Vol 2 No 9 (2022): Februari 2022
Publisher : Forum Kerjasama Pendidikan Tinggi (FKPT)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.47065/tin.v2i9.1027

Abstract

The rapid development of technology plays an important role in the rapid exchange of information. In sending information in the form of images, there are still problems, including because of the large size of the image so that the solution to this problem is to perform compression. In this thesis, we will implement and compare the performance of the Arithmetic Coding and Shannon-Fano algorithms by calculating the compression ratio, compressed file size, compression and decompression process speed. Based on all test results, that the Arithmetic Coding algorithm produces an average compression ratio of 62.88% and a Shannon-Fano compression ratio of 61.73%, then Arithmetic Coding the average speed in image compression is 0.072449 seconds and Shannon-Fano 0.077838 second. Then the Shannon-Fano algorithm has an average speed for decompression of 0.028946 seconds and the Arithmetic Coding algorithm 0.034169 seconds. The decompressed image on the Arithmetic Coding and Shannon-Fano algorithm is in accordance with the original image. It can be concluded from the test results that the Arithmetic Coding algorithm is more efficient in compressing *.png images than the Shannon-Fano algorithm, although in terms of decompression Shannon-Fanose is a little faster compared to Arithmetic Coding.
Temperature Effects on Quantum Ballistic Transport in Double-Gate MOSFETs Using Landauer"“Büttiker Formalism Sangian, Messiah Charity; Syuhada, Ibnu; Khairurrijal, Khairurrijal; Noor, Fatimah Arofiati
POSITRON Vol 15, No 1 (2025): Vol. 15 No. 1 Edition
Publisher : Fakultas Matematika dan Ilmu Pengetahuan Alam, Univetsitas Tanjungpura

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26418/positron.v15i1.83947

Abstract

This paper presents the development and application of a simulator utilizing the Landauer"“Büttiker formalism to model quantum ballistic transport in double-gate (DG) metal-oxide-semiconductor field-efffect transistors (MOSFETs), focusing on temperature variations from 0.9 K to 300 K. The simulator employs advanced modelling techniques, including the exponential decay model, quantum interference model, and the Wentzel"“Krames"“Brillouin (WKB) approximation for transmission probability. Additionally, it incorporates the Landauer"“Büttiker approach for current calculation and the gradual channel approximation (GCA) model for device operation. By leveraging these techniques, the simulator provides comprehensive insights into the quantum mechanical effects that influence device performance under various thermal conditions. This research underscores the critical role of temperature variations in the design and optimization of DG MOSFETs, emphasizing the necessity of effective thermal management and a thorough understanding of quantum effects to enhance the performance and reliability of nanoscale transistor technologies. These findings highlight the importance of incorporating temperature-dependent quantum mechanical considerations in advancing future nanoelectronic devices.
Co-Authors Fatimah Arofiati Noor Khairurrijal khairurrijal Sangian, Messiah Charity