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All Journal International Journal of Electrical and Computer Engineering International Journal of Power Electronics and Drive Systems (IJPEDS)
Hassan Qjidaa
Sidi Mohamed Ben Abdellah University
Computer Science & IT Control & Systems Engineering Electrical & Electronics Engineering

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Journal : International Journal of Electrical and Computer Engineering

 1 
Integrated energy management converter based on maximum power point tracking for photovoltaic solar system Mounir Ouremchi; Said El Mouzouade; Karim El Khadiri; Ahmed Tahiri; Hassan Qjidaa
International Journal of Electrical and Computer Engineering (IJECE) Vol 12, No 2: April 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v12i2.pp1211-1222

Abstract

This paper presents an integrated power control system for photovoltaic systems based on maximum power point tracking (MPPT). The architecture presented in this paper is designed to extract more power from photovoltaic panels under different partial obscuring conditions. To control the MPPT block, the integrated system used the ripple correlation control algorithm (RCC), as well as a high-efficiency synchronous direct current (DC-DC) boost power converter. Using 180 nm complementary metal-oxide-semiconductor (CMOS) technology, the proposed MPPT was designed, simulated, and layout in virtuoso cadence. The system is attached to a two-cell in series that generates a 5.2 V average output voltage, 656.6 mA average output current, and power efficiency of 95%. The final design occupies only 1.68 mm2.
A new high speed charge and high efficiency Li-Ion battery charger interface using pulse control technique Mustapha El Alaoui; Karim El Khadiri; Rachid El Alami; Ahmed Tahiri; Ahmed Lakhssassi; Hassan Qjidaa
International Journal of Electrical and Computer Engineering (IJECE) Vol 12, No 2: April 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v12i2.pp1168-1179

Abstract

A new Li-Ion battery charger interface (BCI) using pulse control (PC) technique is designed and analyzed in this paper. Thanks to the use of PC technique, the main standards of the Li-Ion battery charger, i.e. fast charge, small surface area and high efficiency, are achieved. The proposed charger achieves full charge in forty-one minutes passing by the constant current (CC) charging mode which also included the start-up and the constant voltage mode (CV) charging mode. It designed, simulated and layouted which occupies a small size area 0.1 mm2 by using Taiwan Semiconductor Manufacturing Company 180 nm complementary metal oxide semi-conductor technology (TSMC 180 nm CMOS) technology in Cadence Virtuoso software. The battery voltage VBAT varies between 2.9 V to 4.35 V and the maximum battery current IBAT is 2.1 A in CC charging mode, according to a maximum input voltage VIN equal 5 V. The maximum charging efficiency reaches 98%.
Full On-chip low dropout voltage regulator with an enhanced transient response for low power systems Hatim Ameziane; Kamal Zared; Hicham Akhamal; Hassan Qjidaa
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 6: December 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1156.114 KB) | DOI: 10.11591/ijece.v9i6.pp4637-4648

Abstract

A full on chip low Dropout Voltage Regulator (LDO) with fast transient response and small capacitor compensation circuit is proposed. The novel technique is implemented to detect the variation voltage at the output of LDO and enable the proposed fast detector amplifier (FDA) to improve load transient response of 50mA load step. The large external capacitor used in Conventional LDO Regulators is removed allowing for greater power system integration for system-on-chip (SoC) applications. The 1.6-V Full On-Chip LDO voltage regulator with a power supply of 1.8 V was designed and simulated in the 0.18µm CMOS technology, consuming only 14 µA of ground current with a fast settling-time LNR(Line Regulation) and LOR(Load regulation) of 928ns and 883ns respectively while the rise and fall times in LNR and LOR is 500ns.
Co-Authors Ahmed Lakhssassi Ahmed Tahiri Fouad Farah Hatim Ameziane Hicham Akhamal Kamal Zared Karim El Khadiri Mounir Ouremchi Mustapha El Alaoui Rachid El Alami Said El Mouzouade