Mohamed Ribate
Hassan 1st University

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Design of L-S band broadband power amplifier using microstip lines Mohamed Ribate; Rachid Mandry; Jamal Zbitou; Larbi El Abdellaoui; Ahmed Errkik; Mohamed Latrach; Ahmed Lakhssassi
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 5: October 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (734.675 KB) | DOI: 10.11591/ijece.v10i5.pp5400-5408

Abstract

This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA.
A trade-off design of microstrip broadband power amplifier for UHF applications Mohamed Ribate; Rachid Mandry; Jamal Zbitou; Larbi El Abdellaoui; Ahmed Errkik; Mohamed Latrach; Ahmed Lakhssassi
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 1: February 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (811.987 KB) | DOI: 10.11591/ijece.v10i1.pp919-927

Abstract

In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%.
1.25 GHz – 3.3 GHz broadband solid state power amplifier for L and S bands applications Mohamed Ribate; Rachid Mandry; Jamal Zbitou; Larbi El Abdellaoui; Ahmed Errkik; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 5: October 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (265.578 KB) | DOI: 10.11591/ijece.v9i5.pp3633-3641

Abstract

The research of a single stage broadband solid-state power amplifier based on ATF13876 transistor, which operates in the frequency ranging from 1.25 GHz ~3.3 GHz is presented in this paper. To achieve the broadband performance of the operating bandwidth, a multi-section quarter wave impedance transformer and an approximate transformation of previously synthesized lumped elements into transmission lines are adopted. With neatly design of broadband matching networks and biasing circuit, excellent matching performances and unconditionally stability are achieved over the whole operating bandwidth with a maximum gain of 17.2 dB. The large signal simulation shows that the proposed circuit reaches a saturated output power of 18.12 dBm with a maximum PAE of 27.55% and a 1-dB compression point at 5 dBm input power level. Considering the wide frequency coverage, the features of the proposed design compares favorably with the contemporary state-of-the-art.