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All Journal International Journal of Electrical and Computer Engineering TELKOMNIKA (Telecommunication Computing Electronics and Control)

Mohamed Latrach

Microwave Group ESEO Angers

Author-ID : 2374081

Computer Science & IT Electrical & Electronics Engineering

Published : 8 Documents Claim Missing Document

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Articles

Design of L-S band broadband power amplifier using microstip lines Mohamed Ribate; Rachid Mandry; Jamal Zbitou; Larbi El Abdellaoui; Ahmed Errkik; Mohamed Latrach; Ahmed Lakhssassi
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 5: October 2020
Publisher : Institute of Advanced Engineering and Science

This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA.

A trade-off design of microstrip broadband power amplifier for UHF applications Mohamed Ribate; Rachid Mandry; Jamal Zbitou; Larbi El Abdellaoui; Ahmed Errkik; Mohamed Latrach; Ahmed Lakhssassi
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 1: February 2020
Publisher : Institute of Advanced Engineering and Science

In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%.

1.25 GHz – 3.3 GHz broadband solid state power amplifier for L and S bands applications Mohamed Ribate; Rachid Mandry; Jamal Zbitou; Larbi El Abdellaoui; Ahmed Errkik; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 5: October 2019
Publisher : Institute of Advanced Engineering and Science

The research of a single stage broadband solid-state power amplifier based on ATF13876 transistor, which operates in the frequency ranging from 1.25 GHz ~3.3 GHz is presented in this paper. To achieve the broadband performance of the operating bandwidth, a multi-section quarter wave impedance transformer and an approximate transformation of previously synthesized lumped elements into transmission lines are adopted. With neatly design of broadband matching networks and biasing circuit, excellent matching performances and unconditionally stability are achieved over the whole operating bandwidth with a maximum gain of 17.2 dB. The large signal simulation shows that the proposed circuit reaches a saturated output power of 18.12 dBm with a maximum PAE of 27.55% and a 1-dB compression point at 5 dBm input power level. Considering the wide frequency coverage, the features of the proposed design compares favorably with the contemporary state-of-the-art.

A new design of a microstrip rectenna at 5.8 GHz for wireless power transmission applications Taybi Abdellah; Abdelali Tajmouati; Jamal Zbitou; Ahmed Errkik; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 2: April 2019
Publisher : Institute of Advanced Engineering and Science

Due to the ever-increasing power demand, the need of electricity and eco-friendly power in every nook and corner of the world, many reaserch topics have been devoted to deal with this problematic. This paper is taking part of the proposed solutions with the presentation of a novel 5.8 GHz rectenna system for wireless power transmission applications. In one hand, a miniaturized 5.8 GHz circular polarized patch antenna has been designed and simulated by using the Advanced Design System (ADS). In the other hand, a rectifier structure has been investigated and optimized by the use of the Harmonic Balance method available in ADS. The circuit is based on 5 HSMS2820 Schottky diodes implemented in a voltage multiplier topology and a load resistance of 1 KOhm. Both of the structures have been validated by simulation and experimental results and good agreement has been concluded.

Novel fractal antenna for UWB applications using the coplanar waveguide feed line Akram El Hamdouni; Abdelali Tajmouati; Jamal Zbito; Abdelwahed Tribak; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 4: August 2019
Publisher : Institute of Advanced Engineering and Science

In this study an original Coplanar Waveguide (CPW) antenna has been achieved into simulation and manufacturing in order to be an important candidate for the Ultra-wideband applications. The area of the proposed structure is 34mm x 43mm operating in the frequency range 3.1 GHz – 10.6 GHz released as UWB by the Federal Communications Commission (FCC). To perform the design of the proposed CPW antenna two electromagnetic solvers has been adopted which are CST of Microwave Studio and ADS of Agilent. The radiating patch has been chosen circular with fractal geometry based on circular slots with different sizes. The dielectric substrate is an Epoxy FR4 with a Relative permittivity 4.4, a thickness 1.6 and a loss tangent 0.025. To valid the functionality of the antenna two parameters has been computed which are the coefficient of reflection and the radiation pattern and confirmed into measurement by using the Network Analyser and the anechoic chamber.

A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications Amine Rachakh; Larbi El Abdellaoui; Jamal Zbitou; Ahmed Errkik; Abdelali Tajmouati; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 5: October 2018
Publisher : Institute of Advanced Engineering and Science

Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm2.

A Two-stages Microstrip Power Amplifier for WiMAX Applications Amine Rachakh; Larbi El Abdellaoui; Jamal Zbitou; Ahmed Errkik; Abdelali Tajmouati; Mohamed Latrach
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 16, No 6: December 2018
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v16i6.9338

Amplification is one of the most basic and prevalent microwave analog circuit functions. Wherefore power amplifiers are the most important parts of electronic circuits. This is why the designing of power amplifiers is crucial in analog circuit designing. The intent of this work is to present an analysis and design of a microwave broadband power amplifier by using two stages topology. A two stages power amplifier using a distributed matching network for WiMAX applications is based on ATF-21170 (GaAs FET). The configuration aims to achieve high power gain amplifier with low return loss over a broad bandwidth. The proposed BPA is designed with a planar structure on an epoxy (FR4) substrate. The planar structure is also utilized for getting the good matching condition. The advanced design system (ADS) software is used for design, simulation, and optimization the proposed amplifier. The complete amplifier achieves an excellent power gain; is changed between 28.5 and 20dB with an output power of 12.45dBm at 1dB compression point. For the input reflection coefficient (S11) is varied between -20 and -42dB. While the output reflection coefficient (S22) is varied between -10 and - 49dB over the wide frequency band of 3.2-3.8GHz.

Design of Negative Resistance Oscillator with Rocord Low Phase Noise Ayoub Malki; Jamal Zbitou; Larbi El Abdellaoui; Mohamed Latrach; Abdelali Tajmouati; Ahmed Errkik
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 16, No 2: April 2018
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v16i2.6999

The aim of this paper is to use a new design of a negative resistance microwave oscillator in order to fabricate oscillator with very good performance in terms of output power, efficiency, stability and phase noise. In this study the new concept of oscillator using distributed resonator and micro-strip circuit elements improve performances of our structure. A micro-strip microwave oscillator with low phase noise based on an NPN silicon planar epitaxial transistor has been designed, fabricated, and characterized. In this design, each step has been conducted by using Advanced Design System (ADS) and following a theoretical study which enable to optimize the different performances of the whole circuit. The oscillator produce a sinusoidal signal with spectrum power of 12.25 dBm at 2.45 GHz into 50 Ω load when polarized at Vcc=15V with DC to RF efficiency of 16. The obtained phase noise of -120 dBc/Hz at 100 Hz offset is the result of the use of high Q factor resonator and the depth study of the parameters of the oscillator. Simulation and measurement results are in good agreement.

Co-Authors Abdelali Tajmouati Abdelali Tajmouati Abdelali Tajmouati Abdelali Tajmouati Abdelwahed Tribak Ahmed Errkik Ahmed Errkik Ahmed Errkik Ahmed Errkik Ahmed Lakhssassi Akram El Hamdouni Amine Rachakh Amine Rachakh Ayoub Malki Jamal Zbito Jamal Zbitou Jamal Zbitou Jamal Zbitou Jamal Zbitou Larbi El Abdellaoui Larbi El Abdellaoui Larbi El Abdellaoui Larbi El Abdellaoui Mohamed Ribate Rachid Mandry Taybi Abdellah

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