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Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs Ramani Kannan; Saranya Krishnamurthy; Chay Che Kiong; Taib B Ibrahim
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 2: April 2019
Publisher : Institute of Advanced Engineering and Science

Power electronic devices in spacecraft and military applications requires high radiation tolerant. The semiconductor devices face the issue of device degradation due to their sensitivity to radiation. Power MOSFET is one of the primary components of these power electronic devices because of its capabilities of fast switching speed and low power consumption. These abilities are challenged by ionizing radiation which damages the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET. Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect mechanism that creates defects by generation of excessive electron–hole pairs causing electrical characteristics shifts. This study investigates the impact of gamma ray irradiation on dynamic characteristics of silicon and silicon carbide power MOSFET. The switching speed is limit at the higher doses due to the increase capacitance in power MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing or decreasing capacitances in power MOSFETs. These defects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-voltage characteristics, results were analyzed and plotted for the both silicon and silicon carbide power MOSFET.

A new direct current circuit breaker with current regeneration capability S. M. Sanzad Lumen; Ramani Kannan; Nor Zaihar Yahaya
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 12, No 4: December 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v12.i4.pp2322-2335

Direct current (DC) power systems are becoming very popular due to better control ability and equipment reliability thanks to the continuous development of power electronics. A DC circuit breaker (DCCB) used for current interruption in a DC network is a major part of the system. It plays the vital role of isolating networks during fault clearing as well as during normal load switching. Breaking the DC current is a major challenge as it does not have any natural zero crossing points like the AC current has. In addition, energy stored in the network inductances during normal operation opposes the instantaneous current breaking. Hence, all the conventional DC circuit breaker topologies use lossy elements to dissipate this stored energy as heat during the current breaking operation. However, it is possible to store this energy and reuse it later by developing an improvised topology. In this paper, the prospects of energy recovery and reuse in DC circuit breakers have been studied, and a new topology with regenerative current breaking capability has been proposed. This new topology can feed the stored energy of the network back into the same network after breaking the current and thus can improve the overall system efficiency.

Prospects of regenerative current breaking in DC circuit breaker topology S. M. Sanzad Lumen; Ramani Kannan; Nor Zaihar Yahaya
International Journal of Applied Power Engineering (IJAPE) Vol 10, No 3: September 2021
Publisher : Institute of Advanced Engineering and Science

Due to the stunning advancement of power electronics, DC power system is getting immense attention in the field of research. Protection and hereafter the protective devices for the DC power system application are two vital areas that need to be explored and developed further. Designing a protective device such as DC circuit breaker possesses a lot of challenges. The main challenge is to interrupt a current which does not have a natural zero crossing like AC current has. In addition, energy is stored in the network inductances during normal operation. Instantaneous current breaking is opposed by this stored energy during circuit breaker tripping, hence, all the DC circuit breaker topologies proposed in literature use snubber network, nonlinear resistor to dissipate this stored energy as heat during the current breaking operation. However, it is possible to store this energy momentarily and reuse it later by developing an improvised topology. In this paper, the prospects of energy recovery and reuse in a DC circuit breaker was studied and a new topology with regenerative current breaking capability had been proposed. This new topology can feed the stored energy of the network back into the same network after breaking the current and thus can improve the overall system efficiency.

Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation Erman Azwan Yahya; Ramani Kannan; Lini Lee
Bulletin of Electrical Engineering and Informatics Vol 8, No 4: December 2019
Publisher : Institute of Advanced Engineering and Science

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation Erman Azwan Yahya; Ramani Kannan; Lini Lee
Bulletin of Electrical Engineering and Informatics Vol 8, No 4: December 2019
Publisher : Institute of Advanced Engineering and Science

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation Erman Azwan Yahya; Ramani Kannan; Lini Lee
Bulletin of Electrical Engineering and Informatics Vol 8, No 4: December 2019
Publisher : Institute of Advanced Engineering and Science

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

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