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All Journal International Journal of Electrical and Computer Engineering TELKOMNIKA (Telecommunication Computing Electronics and Control)
Yasir Hashim
Tishk International University (TIU)
Computer Science & IT Electrical & Electronics Engineering

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Temperature characteristics of FinFET based on channel fin width and working voltage Yousif Atalla; Yasir Hashim; Abdul Nasir Abd. Ghafar; Waheb A. Jabbar
International Journal of Electrical and Computer Engineering (IJECE) Vol 10, No 6: December 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (693.526 KB) | DOI: 10.11591/ijece.v10i6.pp5650-5657

Abstract

This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V).
A new factor for fabrication technologies evaluation for silicon nanowire transistors Yasir Hashim; Mohammed Nazmus Shakib
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 18, No 5: October 2020
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v18i5.12121

Abstract

This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays.  This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.
Co-Authors Abdul Nasir Abd. Ghafar Mohammed Nazmus Shakib Waheb A. Jabbar Yousif Atalla