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All Journal International Journal of Electrical and Computer Engineering Bulletin of Electrical Engineering and Informatics Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Indonesian Journal of Electrical Engineering and Computer Science
Ghanim Thiab Hasan
Tikrit university
Computer Science & IT Electrical & Electronics Engineering

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Measurement and analysis of conductor surface temperature in dependence of current variation Ali Hlal Mutlaq; Mahmood Ali Ahmed; Diadeen Ali Hameed; Ghanim Thiab Hasan
Bulletin of Electrical Engineering and Informatics Vol 11, No 5: October 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v11i5.3915

Abstract

The reliability and service life of power cables is closely related to the cable ampacity and temperature rise in the power cable. In a conductor carries AC current, complex processes may appear, which directly affect the temperature of the conductor surface. So, to keep a conductor in a good state, it is necessary to maintain the conductor temperature in a acceptable value. In this paper, a procedure for measuring the temperature of conductor surface and the corresponding numerical processing of measurement results has been presented. The measurement of the temperature probe characteristics and the temperature measurement on the surface of the conductor, both required the use of certain numerical methods, such as interpolation and fitting of the measured values in time diagrams. The procedure was applied to three copper conductors with different cross section area and one aluminum conductor and the final results are presented graphically, in the form of time diagrams.
Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates Ghanim Thiab Hasan; Ali Hlal Mutlaq; Kamil Jadu Ali; Mohammed Ayad Saad
International Journal of Electrical and Computer Engineering (IJECE) Vol 13, No 3: June 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v13i3.pp2632-2639

Abstract

In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.
Co-Authors Ahmed Hasan Mohammad Ahmed Hasan Mohammed Alaa Khudhair Abbas Ali Hlal Mutlaq Ali Hlal Mutlaq Diadeen Ali Hameed Faris Hassan Tata Harith Abdullah Ali Kamil Jadu Ali Kamil Jadu Ali Khaleel Ali Khudhur Mahmood Ali Ahmed Mohammad Omar Salih Mohammed Ayad Saad Nabeel Mohamed akram Samad Nabeel Mohammed Akram Samad Tahseen Ameen Faisal