Azmi Awang Md Isa
Universiti Teknikal Malaysia Melaka

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Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle Harriman Razman; Azmi Awang Md Isa; Mohamad Kadim Suaidi; Mohd Azizi Chik
International Journal of Electrical and Computer Engineering (IJECE) Vol 12, No 2: April 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v12i2.pp1265-1273

Abstract

A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of a thin (100 nm) coating of masking metallic patterned (features) with critical dimension (CD) of nanometers on a thicker quartz substrate. The features can be damaged by electrostatic discharge (ESD) when exposed to the environment electrostatic charge and caused deformed IC and eventually device difunctional. Semiconductor equipment materials industry (SEMI) standard established the allowable electrostatic charge on reticle based on the characterization of ESD threshold voltage on binary reticle. However, there is another type of reticle which is phase-shift mask (PSM), has not been characterized for its ESD threshold voltage. A direct current (DC) voltage is applied directly to the structures with CD of 80 nm, 110 nm, and 160 nm. The surface current is recorded at all levels of stress from 1 to 100 V. The current–voltage (IV) curve and physical inspection results for each cell are then reviewed and classified. The results yielded which no electric field induced migration (EFM) defect and breakdown voltage occurred at any of the structures. The cathode’s metal work function has been identified as the factor that influences the PSM reticle ESD threshold voltage.
Adaptive Multi-state Millimeter Wave Cell Selection Scheme for 5G communication Mothana L Attiah; Azmi Awang Md Isa; Zahriladha Zakaria; Nor Fadzilah Abdullah; Mahamod Ismail; Rosdiadee Nordin
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 5: October 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (2344.847 KB) | DOI: 10.11591/ijece.v8i5.pp2967-2978

Abstract

Millimeter wave bands have been introduced as one of the most promising solutions to alleviate the spectrum secrecy in the upcoming future cellular technology (5G) due the enormous amount of raw bandwidth available in these bands. However, the inherent propagation characteristics of mmWave frequencies could impose new challenges i.e. higher path loss, atmospheric absorption, and rain attenuation which in turn increase the outage probability and hence, degrading the overall system performance. Therefore, in this paper, a novel flexible scheme is proposed namely Adaptive Multi-State MmWave Cell Selection (AMSMC-S) through adopting three classes of mmWave base stations, able to operate at various mmWave carrier frequencies (73, 38 and 28 GHz). Two mmWave cellular Grid-Based cell deployment scenarios have been implemented with two inter-site-distances 200 m and 300 m, corresponding to target area of (2.1 km2) and (2.2 km2). The maximum SINR value at the user equipment (UE) is taken in to consideration to enrich the mobile user experience. Numerical results show an improvement of overall system performance, where the outage probability reduced significantly to zero while maintaining an acceptable performance of the 5G systems with approximately more than 50% of the mobile stations with more than 1Gbps data rate.