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Jamal Zbitou
Settat Hassan 1st University
Computer Science & IT Electrical & Electronics Engineering

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A Novel Design of Voltage Controlled Oscillator By using the Method of Negative Resistance Ayoub Malki; Larbi El Abdellaoui; Jamal Zbitou; A. Errkik; A. Tajmouati; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 6: December 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (845.947 KB) | DOI: 10.11591/ijece.v8i6.pp4496-4504

Abstract

The objective of this paper is to develop a new design of a voltage controlled microwave oscillator by using the method of negative resistance in order to fabricate VCO with very good performance in terms of tuning rang, phase noise, output power and stability. The use of hybrid microwave integrated circuit technology’s (HMIC) offers a lot of advantage for our structure concerning size, cost, productivity, and Q factor. This VCO is designed at [480MHz; 1.4GHz] frequency for applications in the phase locked loop (PLL) for signal tracking, FM demodulation, frequency modulation, mobile communication, etc. The different steps of studied voltage controlled oscillator’s design are thoroughly described. Initially designed at a fixed frequency meanwhile the use of a varactor allow us to tune the frequency of the second design. It has been optimized especially regarding tuning bandwidth, power, phase noise, consumption and size of the whole circuit. The achieved results and proposed amendment are the product of theoretical study and predictive simulations with advanced design system microwave design software. A micro-strip VCO with low phase noise based on high gain ultra low noise RF transistor BFP 740 has been designed, fabricated, and characterized. The VCO delivers a sinusoidal signal at the frequency 480 MHz with tuning bandwidth 920 MHz, spectrum power of 12.62 dBm into 50 Ω load and phase noise of -108 dBc/Hz at 100 Hz offset. Measurement results and simulation are in good agreement. Circuit is designed on FR4 substrate which includes integrated resonators and passive components.
A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications Amine Rachakh; Larbi El Abdellaoui; Jamal Zbitou; Ahmed Errkik; Abdelali Tajmouati; Mohamed Latrach
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 5: October 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (473.889 KB) | DOI: 10.11591/ijece.v8i5.pp3882-3889

Abstract

Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm2.
Co-Authors A. Errkik A. Tajmouati Abdelali Tajmouati Ahmed Errkik Amine Rachakh Ayoub Malki Larbi El Abdellaoui Mohamed Latrach Mohamed Latrach