Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal TELKOMNIKA (Telecommunication Computing Electronics and Control)
Ismail Saad
Universiti Malaysia Sabah
Computer Science & IT

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
INVESTIGATION OF SHORT CHANNEL EFFECT ON VERTICAL STRUCTURES IN NANOSCALE MOSFET Munawar A. Riyadi; Ismail Saad; Razali Ismail
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 7, No 3: December 2009
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v7i3.591

Abstract

The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel length (Lch) is demonstrated with the help of numerical tools. The evaluation of short channel effect (SCE) parameters, i.e. threshold voltage roll-off, subthreshold swing (SS), drain induced barrier lowering (DIBL) and leakage current shows the considerable advantages as well as its thread-off in implementing the structure, in particular for nanoscale regime.
Co-Authors Munawar Agus Riyadi Razali Ismail