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All Journal Bulletin of Electrical Engineering and Informatics Indonesian Journal of Electrical Engineering and Computer Science
Md. Golam Sadeque
Multimedia University
Electrical & Electronics Engineering

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High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM Noor Syakirah Ruslan Hadi; Zubaida Yusoff; Md. Golam Sadeque; Shaiful Jahari Hashim; Muhammad Akmal Chaudhary
Bulletin of Electrical Engineering and Informatics Vol 9, No 5: October 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (832.831 KB) | DOI: 10.11591/eei.v9i5.2226

Abstract

The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized on an FR-4 substrate to keep the cost as low as possible. A 10W GaN HEMT CGH40010 transistor from Cree has been used for this RFPA design.
A high-efficiency continuous class-F power amplifier design using simplified real frequency technique Md. Golam Sadeque; Zubaida Yusoff; Mardeni Roslee
Bulletin of Electrical Engineering and Informatics Vol 9, No 5: October 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (708.581 KB) | DOI: 10.11591/eei.v9i5.2227

Abstract

The fourth-generation (4G) wireless communication has been deployed in many countries. However, there are still some problems such as spectrum crisis due to the increase of wireless mobile devices and servicing. Therefore, the fifth-generation (5G) communication system will be employed at some different spectrum other than 4G frequency band. The radio frequency power amplifier (RFPA) is the key component of the 5G system. In this paper, a broadband continuous class-F (CCF) RFPA is designed for the 5G frequency band from 3.3-4.3 GHz. The input and output matching network are designed using the simplified real frequency technique (SRFT). Using a 10W GaN CGH40010F Cree device, the efficiency of the RFPA achieved greater than 70.7% for the whole frequency band with a maximum of 81.5%. The output power and the gain are more than 40 dBm and 10 dB respectively
Analysis and design of the biasing network for 1 GHz bandwidth RF power amplifier Md. Golam Sadeque; Zubaida Yusoff; Mardeni Roslee; Shaiful Jahari Hashim; Azah Syafiah Mohd Marzuki
Indonesian Journal of Electrical Engineering and Computer Science Vol 24, No 1: October 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v24.i1.pp308-316

Abstract

The bandwidth of the wireless communication has increased due to the various applications of the wireless devices. A radio frequency power amplifier (RFPA) is one of the crucial components of the transceiver. So, to meet the requirement of the bandwidth, wideband RFPA is needed. The RFPA not only requires a wideband matching network but importantly the biasing network. For the next-generation communication system, a wideband biasing network is needed to operate in the wide GHz bandwidth range. In this paper, a wideband biasing network for the power amplifier is designed using a quarter-wave transmission line and a butterfly stub for the frequency band of 3.3 GHz to 4.3 GHz. Roger’s RO3006 is used as the substrate for the design of the biasing network. The designed network performed well in the required frequency range. The performances of the biasing network have shown 9 dB to 19 dB return loss, the radio frequency (RF) isolation has more than 35 dB, and 0 dB to 1.5 dB insertion loss. This wideband biasing network can be used for the next generation communication system.
Co-Authors Azah Syafiah Mohd Marzuki Mardeni Roslee Muhammad Akmal Chaudhary Noor Syakirah Ruslan Hadi Shaiful Jahari Hashim Shaiful Jahari Hashim Zubaida Yusoff