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Siti Amaniah Mohd Chachuli
Universiti Teknikal Malaysia Melaka
Electrical & Electronics Engineering

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Investigation on the ohmic characteristic of Ni/Ti/4H-SiC M. I. Idris; Z. A. F. M. Napiah; Marzaini Rashid; M. N. Shah Zainudin; Siti Amaniah Mohd Chachuli; M. A. Azam
Bulletin of Electrical Engineering and Informatics Vol 10, No 5: October 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v10i5.3174

Abstract

Ohmic contact is important for silicon carbide (SiC) devices such as Schottky diode, junction field effect transistor (JFET) and metal oxide transistor (MOSFET). The effect of post metallization annealing (PMA) on the ohmic characteristics of Ni/Ti/4H-SiC is investigated. The samples were annealed under different ambients of high vacuum, forming gas and N2 gas at 1050˚C for 3 minutes using rapid thermal process (RTP). Current-voltage (I-V) measurements taken for different distances of a transmission line model (TLM) structure have been utilized to extract the contact resistivity. The correlation between surface roughness and resistivity has been investigated. It was found that the involvement of nitrogen during the annealing process at 1050˚C was ineffective to reduce the contact resistivity. The resistivity is improved when the samples were annealed in forming gas (FG), (a mixture of H2+N2) environment, showing that the incorporation of H2 gas during the annealing process has produced a better result. On the other hand, high vacuum PMA was found to be effective to improve the ohmic characteristic with higher current level at lower voltage. Hence, the enhanced performance observed in high vacuum annealing samples is beneficial to get ohmic contact on Ni/Ti/4H-SiC for PMA process with a low thermal budget.
Enhancement of methane detection using graphene-doped zinc oxide with Blynk internet of things for real-time monitoring Siti Amaniah Mohd Chachuli; Fatin Liyana Syakinah Mohd Yatim; Nur Hazahsha Shamsudin; Omer Coban
Bulletin of Electrical Engineering and Informatics Vol 15, No 1: February 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v15i1.9049

Abstract

Methane is a potent greenhouse gas, significantly contributing to global warming gases when released into the atmosphere. Methane, a naturally occurring gas, has no harmful impacts on human life at low concentrations. As concentrations rise, symptoms like fatigue, headaches, nausea, irritability, and speech difficulties increase due to asphyxiation. Zinc oxide (ZnO) and graphene-doped ZnO gas sensors were fabricated using a screen-printing technique onto a Kapton film to compare their performance to methane gas at room temperature. A silver paste was used as the interdigitated electrode, deposited on the Kapton film using a screen-printing technique, and fired at 150 °C for 15 minutes. Next, ZnO and graphene-doped ZnO pastes were deposited onto the interdigitated electrode using a screen-printing technique and became the second layer of the gas sensor. The sensing layer was annealed at 200 °C for 60 minutes. All gas sensors responded well to methane gas at room temperature. As a comparison, the graphene-doped ZnO gas sensor responded better to 6,700 ppm of methane gas than the ZnO gas sensor at room temperature. The highest response of graphene-doped ZnO to methane gas was produced by 5 wt. % of graphene doped into ZnO with a response value of 11.5.
Co-Authors Fatin Liyana Syakinah Mohd Yatim M. A. Azam M. I. Idris M. N. Shah Zainudin Marzaini Rashid Nur Hazahsha Shamsudin Omer Coban Z. A. F. M. Napiah