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All Journal Journal of Science and Applicative Technology Metal Indonesia
Lukman Nulhakim
Engineering Physics Department, Institut Teknologi Sumatera, Indonesia
Civil Engineering, Building, Construction & Architecture Earth & Planetary Sciences Engineering Materials Science & Nanotechnology Mechanical Engineering

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Sintesis ZnO dari Limbah Industri Logam dengan Metode Hidrotermal Menggunakan Agen Pengendapan Asam Oksalat (C2H2O4) Erane Dio Putra; Rifqi Ikhwanuddin; Lukman Nulhakim; Widi Astuti
Jurnal Metal Indonesia Vol 43, No 2 (2021): Metal Indonesia
Publisher : Balai Besar Logam dan Mesin

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.32423/jmi.2021.v43.86-90

Abstract

Limbah industri logam penghasil baja tahan karat yang berasal dari tungku busur listrik masih mengandung zinc (Zn) sebanyak 50-60% ingin diolah kembali untuk membentuk zink oksida (ZnO) dengan perlakuan metode hidrotermal. Tujuan dari penelitian ini adalah mempelajari pengaruh proses pelindian dan pengendapan terhadap ektraksi Zn dari prekursor limbah logam dan mengetahui apakah dapat terbentuk produk ZnO. Terdapat dua proses persiapan utama yang dilakukan pada penelitian ini berupa proses pelindian menggunakan asam asetat (CH3COOH) 1M dan proses pengendapan menggunakan Asam Oksalat (C2H2O4) 1M. Proses hidrotermal dilakukan dengan tiga variabel suhu (120, 150, 200°C) dan tiga variabel waktu (1, 3, 6 jam). Terdapat tiga macam karakterisasi yang dilakukan yaitu menggunakan UV-Vis spectroscopy, X-ray diffration (XRD), dan X-ray fluorescence (XRF). Pada UV-Vis menunjukkan terdapat kenaikan absorbansi pada sampel di panjang gelombang 365 nm, hasil karakterisasi XRF menunjukkan kandungan Zn meningkat dari 50-60% menjadi 94-95%, karakterisasi XRD menunjukkan bahwa sampel yang dibuat masih berupa zinc oksalat (Zn(C2O4)) dan belum terbentuk senyawa ZnO.
Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering Lukman Nulhakim; Monna Rozana; Brian Yuliarto; Hisao Makino
Journal of Science and Applicative Technology Vol 4 No 1 (2020): Journal of Science and Applicative Technology June Chapter
Publisher : Lembaga Penelitian dan Pengabdian Masyarakat (LPPM), Institut Teknologi Sumatera, Lampung Selatan, Lampung, Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (632.523 KB) | DOI: 10.35472/jsat.v4i1.264

Abstract

The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.
Studi investigasi adsorpsi oksigen pada permukaan ZnO[111] Listra Yehezkiel Ginting; Andam Deatama Refino; Lukman Nulhakim
Journal of Science and Applicative Technology Vol 4 No 1 (2020): Journal of Science and Applicative Technology June Chapter
Publisher : Lembaga Penelitian dan Pengabdian Masyarakat (LPPM), Institut Teknologi Sumatera, Lampung Selatan, Lampung, Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (524.29 KB) | DOI: 10.35472/jsat.v4i1.221

Abstract

The growth of ZnO is an interesting case in the study of functional materials. Adsorption of molecular oxygen onto the surface of Zn-terminated ZnO can be used as a sample case of ZnO crystal growth with its precursors. In this study, we want to see the tendency of molecular oxygen adsorption: whether it is adsorbed as a whole molecule or it is dissociated into the two constituting oxygen atoms before being adsorbed on oxygen adsorption sites for the growth of the crystal. Potential energy surface survey has been carried out on the three configuration of molecular oxygen based on their translational degree of freedom. The configuration of the oxygen molecule with O=O bond axis being normal to the surface tends to be adsorbed wholly as molecule with adsorption energy of 4.11 eV, while the configuration of bond perpendicular to the surface have the tendency to dissociate into individual atoms.
Co-Authors Andam Deatama Refino Brian Yuliarto Erane Dio Putra Hisao Makino Listra Yehezkiel Ginting Monna Rozana Rifqi Ikhwanuddin Widi Astuti