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Monna Rozana
Research Unit for Clean Technology, Indonesian Institute of Sciences, Indonesia
Civil Engineering, Building, Construction & Architecture Earth & Planetary Sciences Engineering Materials Science & Nanotechnology Mechanical Engineering

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Electrical and optical properties of Ga-doped ZnO thin films deposited by DC magnetron sputtering Lukman Nulhakim; Monna Rozana; Brian Yuliarto; Hisao Makino
Journal of Science and Applicative Technology Vol 4 No 1 (2020): Journal of Science and Applicative Technology June Chapter
Publisher : Lembaga Penelitian dan Pengabdian Masyarakat (LPPM), Institut Teknologi Sumatera, Lampung Selatan, Lampung, Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (632.523 KB) | DOI: 10.35472/jsat.v4i1.264

Abstract

The electrical and optical properties of Ga-doped ZnO (GZO) thin film prepared by direct current (dc) magnetron sputtering were investigated. The GZO thin film was deposited on a glass substrate at a substrate temperature (Ts) of room temperature (RT), 150 °C, and 200 °C using DC power of 100 W and an Ar gas flow rate of 450 sccm. The thickness of films was maintained at about 200 nm by controlling the deposition rate of about 12.5 nm/minute. The result showed that the electrical properties improved with increasing Ts. The films deposited at Ts of 200 °C showed the lowest resistivity, highest hall mobility, and carrier concentration compared to other Ts. The average transmittance of the films in the visible range (380-750 nm) was approximately 86.04%. The value of the optical band gap (Eg) was approximately 3.8 eV. The results suggested that GZO films deposited by DC magnetron sputtering at Ts of 200 °C can be applied to transparent conducting oxide (TCO) as an electrode in optoelectronic applications such as solar cells, LEDs and display technology.
Co-Authors Brian Yuliarto Hisao Makino Lukman Nulhakim