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All Journal Jurnal Sains Materi Indonesia Metalurgi
Latifa Hanum Lalasari
Pusat Penelitian Metalurgi dan Material - LIPI Gedung 470 Kawasan Puspiptek - Serpong, Tangerang Selatan 15314
Industrial & Manufacturing Engineering Materials Science & Nanotechnology

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UTILIZATION OF INDONESIAN LOCAL STANNIC CHLORIDE (SnCl4) PRECURSOR IN THE PROCESS OF MAKING FLUORINE- DOPED TIN OXIDE (FTO) CONDUCTIVE GLASS Tri Arini; Latifa Hanum Lalasari; Lia Andriyah; Gennady Fahmi; F. Firdiyono
Jurnal Sains Materi Indonesia Vol 20, No 2: JANUARY 2019
Publisher : Center for Science & Technology of Advanced Materials - National Nuclear Energy Agency

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (403.966 KB) | DOI: 10.17146/jsmi.2019.20.2.5469

Abstract

UTILIZATION OF INDONESIAN LOCAL STANNIC CHLORIDE (SnCl4) PRECURSOR IN THE PROCESS OF MAKING FLUORINE-DOPED TIN OXIDE (FTO) CONDUCTIVE GLASS. Thin layer of fluorine- doped tin oxide (FTO) conductive glass has been deposited on a glass substrate heated at a temperature of 350°C using the ultrasonic spray pyrolysis nebulizer method with variations in fluorine doping and substrate temperatures. This experiment uses the raw material of Indonesian local stannic chloride (SnCl4) (PT Timah Industri) as a precursor with a temperature variation of 250, 300, 350, 400°C. The structure and morphology of the optical and electrical properties of all the thin layers have been examined. XRD results show that all thin layers have a tetragonal crystal structure. In this experiment, there is a significant influence on the role of fluorine doping on resistivity and transmittance values. With the addition of 2% wt doping, the resistivity and transmittance values decrease. The optimum value is obtained by doping 2 wt%, substrate temperature of 350°C with a resistivity value of 9.28.10-5 Ω.cm and transmittance value of 88%.
Pengaruh Waktu Deposisi dan Temperatur Substrat Terhadap Pembuatan Kaca Konduktif FTO (Fluorine doped Tin Oxide) [The Influence of Deposition Time and Substrate Temperature in Manufacturing Process of FTO (Fluorine doped Tin Oxide) Conductive Glass] Tri Arini; Latifa Hanum Lalasari; Akhmad Herman Yuwono; F Firdiyono; Lia Andriyah; Achmad Subhan
Metalurgi Vol 32, No 1 (2017): Metalurgi Vol. 32 No. 1 April 2017
Publisher : National Research and Innovation Agency (BRIN)

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (673.782 KB) | DOI: 10.14203/metalurgi.v32i1.160

Abstract

Manufacturing FTO (fluorine-doped tin oxide) is expected to replace ITO (indium tin oxide) because the process is simple and relatively low cost. Tin chloride precursor with fluorine doping is prepared via sol-gel method with a coating process with spray pyrolisis technique can be considered as a new breakthrough in DSSC device structures. This experiment uses the raw material tin (II) chloride hydrate (SnCl2.2H2O) as precursors and ammonium fluoride (NH4F) as a doping ratio of 6% wt with variation in temperatures of 250, 300, 350, 400 °C and time resistivities of 5, 20, 30 and 40 minutes. The results showed that the longer deposition time decreasing value of conductive glass resistivity. This condition would reduce the value of transmittance. High transmittance and low resistivity obtained on the variation of deposition time 5 minutes with a substrate temperature of 300 °C with a resistivity value of 3.16 x 10-4 Ω.cm and transmittance value of 86.74%AbstrakPembuatan FTO (flourine-doped tin oxide) ini diharapkan dapat menggantikan fungsi ITO (indium tin oxide) karena proses pembuatan yang sederhana dan biaya yang relatif rendah. Prekursor timah klorida dengan doping flourine yang dipreparasi melalui metode sol-gel dengan proses pelapisan dengan teknik spray pyrolisis dapat dipertimbangkan sebagai suatu terobosan baru di dalam struktur device sel surya tersensitasi zat pewarna. Percobaan ini menggunakan bahan baku timah (II) klorida hidrat (SnCl2.2H2O) sebagai prekursor dan amonium florida (NH4F) sebagai doping dengan rasio 6 %berat dengan variasi temperatur 250, 300, 350, 400 °C dan dengan variasi waktu 5, 20, 30, dan 40 menit. Hasil percobaan menunjukkan bahwa semakin lama waktu deposisi maka akan semakin kecil nilai resistivitas kaca konduktif. Namun semakin lama waktu deposisi akan mengurangi nilai transmitansi. Pada percobaan ini menghasilkan transmitansi tinggi dan resistivitas rendah diperoleh pada variasi waktu deposisi 5 menit dengan temperatur substrat 300 °C dengan nilai resitivitas 3,16 x 10-4 Ω.cm dan nilai transmitansi 86,74%.
Co-Authors Achmad Subhan Akhmad Herman Yuwono F Firdiyono F. Firdiyono Gennady Fahmi Lia Andriyah Tri Arini Tri Arini