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All Journal Natural B Praxis : Jurnal Sains, Teknologi, Masyarakat dan Jejaring Jurnal Informatika Ekonomi Bisnis METAL Proceeding of The International Conference on Mathematical Sciences, Natural Sciences, and Computing
Antonius Prisma Jalu Permana
Universitas Katolik Widya Karya Malang
Agriculture, Biological Sciences & Forestry Humanities Biochemistry, Genetics & Molecular Biology Chemical Engineering, Chemistry & Bioengineering Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Decision Sciences, Operations Research & Management Economics, Econometrics & Finance Electrical & Electronics Engineering Energy Environmental Science Health Professions Industrial & Manufacturing Engineering Languange, Linguistic, Communication & Media Law, Crime, Criminology & Criminal Justice Materials Science & Nanotechnology Mathematics Mechanical Engineering Public Health

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Journal : Natural B

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The design of Plasma Reactor and Study of Oxgyen Gas Flow Effect against to the Carbon Ashing Rate in Steel K110 Antonius Prisma Jalu Permana; Bernardus Crisanto Putra Mbulu
Natural B, Journal of Health and Environmental Sciences Vol 4, No 4 (2018)
Publisher : Natural B, Journal of Health and Environmental Sciences

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (897.975 KB)

Abstract

Thin film technology is a green technology in order to decrease industrial waste. The need of thin film cleaner in recoating process is a must. Build up of a plasma reactor using oxygen gas and generate with 2.45GHz microwave was studied. The main objective of this research was to determine alternative plasma generation using high frequency microwave 2.45GHz as a thin film cleaning media on thin film technology. The results show that plasma could generate with maximum pressure at 3cmHg or 30 Torr and it could decrease carbon on surface of steel K110.
Ch2FCF3 Gas Flow Rate Effects of SiO2 Plasma Etching Rate on Quartz Crystal Microbalance Antonius Prisma Jalu Permana; Dionysius Joseph Djoko HS; Masruroh Masruroh
Natural B, Journal of Health and Environmental Sciences Vol 3, No 4 (2016)
Publisher : Natural B, Journal of Health and Environmental Sciences

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (418.546 KB) | DOI: 10.21776/ub.natural-b.2016.003.04.1

Abstract

Effect of gas flow rate on the surface of quartz crystal SiO2 during plasma etching was studied. The etching process was applied using the capacitively coupled plasma (CCP) reactor generated with 100 W power AC generator at low frequency of 40 kHz using a gas flow of CH2FCF3. The main objective of this study was to determine the effect of changing gas flow rate on the plasma etching rate on the SiO2 surfaces. Gas flow rate was varied between 20-40 mL/min, while keeping all other plasma parameters constant. The etched surface of SiO2 was analyzed using white-light profilometer (Topography Measurement System (TMS 1200 Micro Lab)). The results show the physical etching processes influenced the rate of etching at a low gas flow rate, while the higher flow rate influence reactive ion etching (RIE) in the etching process. The maximum etching rate is found at 7.753 nm / min achieved in plasma etching process. 
Co-Authors Bernardus Crisanto Putra Mbulu Dionysius Joseph Djoko HS Donysius Dwi Hercahyo Emilianus Chris Welafubun Masruroh Masruroh Murdiyanto, Danang Redationo, Nereus Tugur Wardhani, Jovita Vicka Bayu