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An Efficient Palladium-Thiourea Catalysed Heck Cross-Coupling Reaction for Molecular Electronic Interest Khairul, Wan M.; Md Shariff, Mohd Shahrul Shahmi; Rahamathullah, Rafizah; Daud, Adibah Izzati; Shamsuddin, Mustaffa; Che Soh, Siti Kamilah
Makara Journal of Technology Vol. 21, No. 2
Publisher : UI Scholars Hub

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Abstract

The synthesis and utilization of C-C bonds formation are concerned about the key steps for the building of several conducting molecular electronics involving many asymmetric catalysts approached, which is an essential task that most researchers would ignore in preparing these materials to enhance the production yield of cross-coupling materials. Despite the enormous progress, there still remains a great demand for economic and practicable cross-coupling processes involving ultra-low catalyst loadings with high turnover numbers due to the employment of conventional metal catalyst. Thus, there has been an excessive interest to cultivate non-phosphine palladium catalysts for excellent achievement of activity, stability, and substrate tolerance which permit the coupling reactions to be conducted under mild reaction condition at ambient atmosphere. In this contribution, N-(4-nitrophenylcarbamothioyl)-N’-(4- methylbenzoyl) thiourea (LT1) and its metal complex of MLT1 featuring Pd (II) have been successfully characterised via typical spectroscopic methods namely; Infrared (IR) spectroscopy, Ultraviolet-visible (UV-Vis) spectroscopy, CHNS elemental analysis, and Nuclear Magnetic Resonance (1H and 13C NMR). In turn, catalytic studies of palladium catalyst (MLT1) were tested for its homogenous catalytic activity in Heck cross-coupling reaction. The reaction was monitored by Gas Chromatography-Flame Ionisation Detector (GC-FID). Results reveal that MLT1 exhibits 100% of conversion starting material into a cross-coupling product, which was alkene-based compound.
Study on Semiconductor Properties of Acetylide-Thiourea Fabricated onto Interdigitated Electrodes (Ides) Platform Towards Application In Gas Sensing Technology Daud, Adibah Izzati; Khairul, Wan M.; Isa, M. I. N.; Wahid, Khairul Anuar Abdul
Makara Journal of Technology Vol. 21, No. 3
Publisher : UI Scholars Hub

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In the past few decades, the unique properties of acetylide and thiourea moieties individually have attracted great attention from researchers in various fields to be developed in numerous applications in advanced materials technology, especially as an active layer in gas sensing devices. The molecular systems of acetylide and thiourea provide a wide range of electronic properties as they possess rigid π-systems in their designated structures. In this study, a derivative of acetylide-thiourea featuring N-(4[4-aminophenyl] ethynyl benzonitrile)-N’-(4-ethyl benzoyl) thiourea (TCN) has been synthesised with the general formula of ArC(O)NHC(S)NHC≡C)Ar adopted the system of D-π-A for the significant development of conductive materials. The derivative consists of donating substituent characterised by typical spectroscopic techniques, such as infrared spectroscopy, UV-visible spectroscopy, and 1H and 13C Nuclear Magnetic Resonance. In turn, TCN was deposited onto interdigitated electrode (IDE) for the measurement of thin-film resistance. The resistance values of synthesised compound is caused the effect of donating substituent attached to the acetylide-thiourea, which indeed altered the conductivity performances of fabricated IDE substrate. In fact, the theoretical calculation also was carried out using Gaussian 09 to evaluate the relationship between experimental and theoretical analyses of acetylide-thiourea semiconductor properties in term of energy band gap and the sensing response to the selected analyte.
Assessment on Heck-Immine Derivatives as Organic Semiconductor Materials Rahamathullah, Rafizah; Keemi, Lim; Khairul, Wan M.
Makara Journal of Technology Vol. 21, No. 3
Publisher : UI Scholars Hub

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Abstract

This paper reports the synthetic, characterization and theoretical evaluation of new class of hybrid Heck-immine system involving mixed moieties of vinylene (C=C) and azomethines (CH=N) which has been successfully integrated into an addition of organic semiconducting materials. The assessment of 4-[(hexyloxyphenyl)methylene]amino)-4’-chloro-stilbene (HEXCS) based on Donor (D)-π-Acceptor (A) was evaluated as active semiconductor material candidates via several spectroscopic and analytical techniques. In turn, the investigation of its potential as dopant system in conductive film was successfully deposited on indium tin oxide (ITO) coated substrate via spin coating method. The relationship between electronic and optical properties, chemical modelling at molecular interactions and electrical performances of the designated system were evaluated. In addition, the quantum mechanical calculation proved that the value of energy separation of HEXCS between HOMO and LUMO exhibits 3.09 eV which was in good agreement with the experimental result of optical band gap 3.10 eV. The findings from the thermal and conductivity analysis revealed that the developed film HEXCS exhibited good stability at high temperature and electrical performance with an increasing conductivity up to 0.1531 Scm-1 under maximum light intensity of 100 Wm-2. Therefore, this proposed type of molecular framework has given an ideal indication to act as semiconductor material candidates potentially use in any designated electronic application.