Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal Atom Indonesia Journal
C. Jagadish
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering The Australian National University, Canberra ACT 0200, Australia
Materials Science & Nanotechnology

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures P.L. Gareso; H.H. Tan; C. Jagadish
Atom Indonesia Vol 38, No 3 (2012): December 2012
Publisher : PPIKSN-BATAN

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (189.483 KB) | DOI: 10.17146/aij.2012.177

Abstract

The atomic intermixing of InxGa1-xAs/InP quantum well structures induced by arsenic irradiation has been investigated using photoluminescence (PL) measurement. The ion doses used were varried from 5x1011 As/cm2 to 1x1013 As/cm2. Also, the irradiation temperature were carried out from -200oC to 300oC. The samples were annealed under Argon flow in rapid thermal annealer (RTA) at 750oC for 60 second. The photoluminescence result showed that there was increase in energy shift at lower doses. However, the energy shift was saturated at higher dose. At elevated temperature implantation showed that the energy shift did not change significantly for all the samples (LM, TS, CS). In additon to this, the higher energy shift was observed in the Compressive Strain (CS) samples, but the lower of the energy shift was experienced in the Tensile Strain (TS) samples. Received: 06 September 2012; Revised: 27 November 2012; Accepted: 03 December 2012
Co-Authors H.H. Tan P.L. Gareso