Article Per Year (5 Year)
p-Index From 2020 - 2025
0.23
P-Index
This Author published in this journals
All Journal Journal of Electrical, Electronic, Information, and Communication Technology (JEEICT)
Stephanus Hanurjaya
Dept. electrical Engineering Faculty of Engineering Universitas Sebelas Maret
Computer Science & IT Control & Systems Engineering Electrical & Electronics Engineering

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration Stephanus Hanurjaya; Miftahul Anwar; Meiyanto Eko Sulistyo; Irwan Iftadi; Subuh Pramono
Journal of Electrical, Electronic, Information, and Communication Technology Vol 2, No 2 (2020): JOURNAL OF ELECTRICAL, ELECTRONIC, INFORMATION, AND COMMUNICATION TECHNOLOGY
Publisher : Universitas Sebelas Maret (UNS)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.20961/jeeict.2.2.44840

Abstract

Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.
Co-Authors Irwan Iftadi Meiyanto Eko Sulistyo Miftahul Anwar Subuh Pramono