Fiqhi Fauzi
Nano Center Indonesia, Jl. PUSPIPTEK, South Tangerang, Banten 15314, Indonesia

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Silicon Carbide/Polysilazane Composite: Effect of Temperature on the Densification, Phase, and Microstructure Evolution Fiqhi Fauzi; Alfian Noviyanto; Pipit Fitriani; Amirudin Wibowo; Toto Sudiro; Didik Aryanto; Nurul Taufiqu Rochman
Indonesian Journal of Chemistry Vol 22, No 2 (2022)
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.22146/ijc.69118

Abstract

This paper reports a route to suppress the grain growth in silicon carbide (SiC) during its sintering by combining it with polysilazane (PSZ). SiC was mixed with PSZ in a 1:1 weight ratio and sintered at 1600, 1700, and 1800 °C in a hot-pressing furnace. A satisfactory density was obtained at sintering temperatures > 1600 °C. The grain sizes of the SiC/PSZ composites sintered at 1700 and 1800 °C were 112 and 125 nm, respectively. The grain shape of the SiC/PSZ composite sintered at 1700 °C was circular and mainly similar to the initial shape of the SiC powder. Grain shape accommodation was observed at a sintering temperature of 1800 °C. It is suggested that different sample shapes were affected by different liquid phase formations. Silicon oxynitride (Si2N2O) was formed and played an important role in densification and microstructure generation.